Deformation potentials of the semimetal HgTe

Latussek, V.; Becker, Christine; Landwehr, G.; Bini, Roberto; Ulivi, Lorenzo

doi:10.1103/physrevb.71.125305

Cited by 16 publications

(15 citation statements)

References 20 publications

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“…By setting the energy of Γ 8 band at k = 0 in unstrained bulk HgTe to zero, Ω equals to the valence band edge E v (z) in the given layer. According to Latussek et al 29 and Becker et al, 30 Ω has a linear dependence on P and T :…”

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confidence: 99%

“…29 Previously, α 0 and α 1 for bulk HgTe have been determined from pressure dependence of intersubband transitions in HgTe/Cd 0.7 Hg 0.3 Te superlattices at P < 2.5 GPa.…”

mentioning

confidence: 99%

“…It is worth noting that that β P is known only for VBO between HgTe and Cd 0.7 Hg 0.3 Te. 29 Thus, by assuming β P to vary linearly with x for Cd x Hg 1−x Te alloy, we extract the value for VBO between HgTe and CdTe.…”

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confidence: 99%

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Pressure- and temperature-driven phase transitions in HgTe quantum wells

et al. 2016

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We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band k·p Hamiltonian we calculate evolution of energy band structure at different quantum well width with hydrostatic pressure up to 20 kBar and temperature ranging up 300 K. In particular, we show that in addition to temperature, tuning of hydrostatic pressure allows to drive transitions between semimetal, band insulator and topological insulator phases. Our realistic band structure calculations reveal that the band inversion under hydrostatic pressure and temperature may be accompanied by non-local overlapping between conduction and valence bands. The pressure and temperature phase diagrams are presented.

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mentioning

confidence: 99%

“…29 Previously, α 0 and α 1 for bulk HgTe have been determined from pressure dependence of intersubband transitions in HgTe/Cd 0.7 Hg 0.3 Te superlattices at P < 2.5 GPa.…”

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confidence: 99%

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Pressure- and temperature-driven phase transitions in HgTe quantum wells

et al. 2016

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“…(C -a) HgTe = -3.69 eV [29], (C -a) CdTe = -3.16 eV [30]. For Hg 1-x Cd x Te with x = 0.12, the value of this parameter is found from the linear approximation (C -a) HgCdTe = -3.63 eV.…”

Section: Influence Of the Misfit Strain On Electron Spectramentioning

confidence: 98%

“…The first effect is the alteration of the gap value between Г 6 and Г 8 bands. The change of this gap is given by [29]:…”

Section: Influence Of the Misfit Strain On Electron Spectramentioning

confidence: 99%

Electron relaxation and mobility in the inverted band quantum well CdTe/Hg1-xCdxTe/CdTe

Melezhik¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Electron relaxation processes at nitrogen temperatures in CdTe/Hg 1-x Cd x Te/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons and interfaces were taken into account. It was found that for undoped and lightly doped QWs (concentration of background n-type charged impurities in the well is 10 14 -10 16 cm -3 or less), for x close to the band inversion value 0.16, the electron mobility grows considerably when the QW width decreases. This mobility is higher for samples with smaller concentrations of charged impurities.

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The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics

Sergeeva,

Zhang,

Portniagin

et al. 2024

Adv Funct Materials

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Among materials produced as colloidal quantum dots (CQDs), HgTe has a special status being the only material covering the whole infrared range from the visible to the THz (0.7–100 µm). This unique property resulting from its electronic structure, combined with an air stability and a capacity for charge conduction has generated consistent and massive efforts to produce and improve HgTe CQDs over the past two decades. Meanwhile, HgTe CQDs offer an infrared platform more advanced than any other colloidal alternatives in the mid‐wave infrared regarding their integration into advanced photonic and optoelectronic applications. Here, the latest developments of HgTe CQDs relative to the material's growth, electron structure modelling, its integration into photonic structures and its transfer as the active material from single element devices toward complex sensors and infrared imagers are reviewed. Finally, a discussion about the potential of this material for industry, rising new challenges beyond economical and production considerations at low technological readiness level, relative to the material and device design, is also included.

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Deformation potentials of the semimetal HgTe

Cited by 16 publications

References 20 publications

Pressure- and temperature-driven phase transitions in HgTe quantum wells

Pressure- and temperature-driven phase transitions in HgTe quantum wells

Electron relaxation and mobility in the inverted band quantum well CdTe/Hg1-xCdxTe/CdTe

The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics

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