1998
DOI: 10.1134/1.1187332
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Deformation potentials of the Γ(000) band extrema in CdGa2S4

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Cited by 5 publications
(4 citation statements)
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“…The temperature shift β¼ ΔE/ΔT of bands V 1 À C 1 equals 3.97 Â 10 À 4 eV/K, and that of bands V 2 À С 1 equals 3.21 Â 10 À 4 eV/ K. According to Ref. [17], β equals 2.44 Â 10 À 4 eV/K for couple of bands V 1 Â С 1 . The temperature coefficient of the shift of the bands V 1 Â С 1 и V 2 Â С 1 were determined taking into account that the excitonic maxima in reflection spectra are observed at both low and room temperatures.…”
Section: Excitonic Spectra Of Cdga 2 Smentioning
confidence: 98%
“…The temperature shift β¼ ΔE/ΔT of bands V 1 À C 1 equals 3.97 Â 10 À 4 eV/K, and that of bands V 2 À С 1 equals 3.21 Â 10 À 4 eV/ K. According to Ref. [17], β equals 2.44 Â 10 À 4 eV/K for couple of bands V 1 Â С 1 . The temperature coefficient of the shift of the bands V 1 Â С 1 и V 2 Â С 1 were determined taking into account that the excitonic maxima in reflection spectra are observed at both low and room temperatures.…”
Section: Excitonic Spectra Of Cdga 2 Smentioning
confidence: 98%
“…[10][11][12][13][14]. Photovoltaic and emission characteristics and the spectrum of local states CdGa 2 S 4 investigated in several studies [15][16][17][18]. High photosensitivity, bright photoluminescence in conjunction with a wide band-gap promote the use of these compounds in semiconductor devices.…”
Section: Introductionmentioning
confidence: 99%
“…1 Introduction CdGa 2 S 4 is a wide-gap semiconductor (Eg = 3.5 eV at 300 K) with high photoconductivity and strong luminescence in the visible region [1][2][3][4]. These desirable properties make this compound a promising optoelectronic material.…”
mentioning
confidence: 99%