Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

Chen, Yiqiang; Feng, Jiangtao; Wang, J. L.; Xu, X. B.; He, Zhiyuan; Li, G. Y.; Lei, Dengyun; Chen, Y. Q.; Huang, Yun

doi:10.1109/ted.2019.2959299

Cited by 35 publications

(8 citation statements)

References 32 publications

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“…This pulsed negative V GS bias stress modulates the negatively charged trap density with an increase in V GS bias stress and increase in stress pulse (t stress ). However, the p-GaN gate HEMT device structure has no oxide layer compared with the MIS-HEMT device, which tells us that the reported surface state trapping mechanisms with oxide layer are not applicable here, although some research on the reliability of commercialized E-mode GaN HEMT with p-GaN gate under reverse electrostatic discharge stress and repetitive short circuit stress has reported that the degradation mechanism could be addressed by the formation of traps at the barrier layer, p-GaN/AlGaN hetero-interface, and AlGaN/GaN interface [26,27]. At the present work, we studied the degradation behavior and mechanism for the impact of various negative gate stress voltage pulses without drain stress bias at room temperature.…”

Section: Gate-lag Effectmentioning

confidence: 90%

Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

2021

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In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (VGS) bias stress. Device transfer and transconductance, output, and gate-leakage characteristics were studied in detail, before and after each pulsed and prolonged negative VGS bias stress. We found that the gradual degradation of electrical parameters, such as threshold voltage (VTH) shift, on-state resistance (RDS-ON) increase, transconductance max (Gm, max) decrease, and gate leakage current (IGS-Leakage) increase, is caused by negative VGS bias stress time evolution and magnitude of stress voltage. The significance of electron trapping effects was revealed from the VTH shift or instability and other parameter degradation under different stress voltages. The degradation mechanism behind the DC characteristics could be assigned to the formation of hole deficiency at p-GaN region and trapping process at the p-GaN/AlGaN hetero-interface, which induces a change in the electric potential distribution at the gate region. The design and application of E-mode GaN with p-GaN gate power devices still need such a reliability investigation for significant credibility.

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Section: Gate-lag Effectmentioning

confidence: 90%

Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

2021

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“…The degradation behavior under reverse electrostatic discharge stress (EDS) is analyzed using transmission line pulse (TLP) tester. 143,144 Moreover, the gate reliability issues arising at high temperature (>150 C) and high gate voltages are interpreted through the gate metal retraction (GMR) process. 145 On the other hand, the gate reliability enhancement of a p-GaN Gate HEMT is fulfilled using surface reinforcement.…”

Section: Reliabilitymentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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“…However, owing to the lack of discharge path in the gate electrode of the p-GaN HEMTs, the devices exhibit poor ESD robustness in the gate-to-source condition, with an equivalent V HBM of only 0.2~0.33 kV. E. Canato [15] and Yiqiang Chen [16,17] reported the gate-tosource ESD failure and degradation mechanisms of p-GaN HEMTs, which mainly rely on the trapping effect and device geometry. To improve the gate-to-source ESD robustness for the p-GaN HEMT, Xin et al reported a unidirectional AlGaN/GaN ESD protection diode based on a self-triggered discharging channel [14].…”

Section: Introductionmentioning

confidence: 99%

A Novel Bidirectional AlGaN/GaN ESD Protection Diode

et al. 2022

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Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the ESD robustness of a GaN power system. In this study, an AlGaN/GaN ESD protection diode with bidirectional clamp capability was proposed and investigated. Through the combination of two floating gate electrodes and two pF-grade capacitors connected in parallel between anode or cathode electrodes and the adjacent floating gate electrodes (CGA (CGC)), the proposed diode could be triggered by a required voltage and possesses a high secondary breakdown current (IS) in both forward and reverse transient ESD events. Based on the experimental verification, it was found that the bidirectional triggering voltages (Vtrig) and IS of the proposed diode were strongly related to CGA (CGC). With CGA (CGC) increasing from 5 pF to 25 pF, Vtrig and IS decreased from ~18 V to ~7 V and from ~7 A to ~3 A, respectively. The diode’s high performance demonstrated a good reference for the ESD design of a GaN power system.

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Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

Cited by 35 publications

References 32 publications

Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

A Novel Bidirectional AlGaN/GaN ESD Protection Diode

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