Degradation mechanism of GaAs PHEMT power amplifiers under elevated temperature lifetest with RF-overdrive

Chou, Y.C.; Lai, R.; Grundbacher, R.; Yu, M.; Leung, D.; Callejo, L.; Eng, D.; Okazaki, Daiki; Yamane, B.; Kiyono, K.; Kan, Q.; Oki, A.K.

doi:10.1109/relphy.2004.1315372

Cited by 5 publications

(1 citation statement)

References 14 publications

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“…The process for GaAs PHEMT is very ripe, but the stability of contaction of gate metal is still a bottleneck of reliability performance [1][2][3]. Because of the instability of contact with gate metal, the metal element will migrate into the inner of device while the semiconductor element (such as Ga in GaAs) will diffuse toward outside [4,5], which will lead to the decrease of the distance between the gate metal and the InGaAs channel layer and effect the typical DC and RF performance, such as the degradation of IDS, GM, and Pout.…”

Section: Introductionmentioning

confidence: 99%

Au electromigration and Ti segregation in TiPtAu gate of PHEMTs

Huang

2014

2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS)

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In the paper, an evaluation structure was designed to investigate the degradation of gate metal in PHEMTs, and it can be used to separately appraise the resisted electromigration levels of the evaporated Ti/Pt/Au and the electroplated Au. The results show that the electromigration resistant level of electroplated Au of Ti/Pt/Au-Au is at least four times lower than that of the evaporated Ti/Pt/Au. For the elements of Au, Ga and Ti in gate metal of Ti/Pt/Au-Au, the degradation of diffusing migration was observed by SIMS. In addition, serious segregation and influx for the element of Ti destroyed the performance of the Schottky barrier in gate structure.

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Section: Introductionmentioning

confidence: 99%

Au electromigration and Ti segregation in TiPtAu gate of PHEMTs

Huang

2014

2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS)

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The gate metal degradation mechanism and electromigration evaluation of PHEMT devices

Huang

Xiao

2011

2011 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering

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Au electromigration and Ti segregation in TiPtAu gate of PHEMTs

Huang¹,

Xiao²,

Li³

2013

Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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In the paper an evaluate structure was designed to investigate the degradation of gate metal in PHEMTs, and it can be used to separately appraise the resisted electro migration levels of the evaporated Ti/PU Au and the electroplated Au. The results show that the electromigration resistant level of electroplated Au of TilPUAu -Au is at least four times lower than that of the evaporated TiIPUAu. For the elements of Au, Ga and Ti in gate metal of TilPU Au -Au, the degradation of diffusing migration was observed by SIMS. In addition, serious segregation and influx for the element of Ti destroyed the performance of the Schottky barrier in gate structure.

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Degradation mechanism of GaAs PHEMT power amplifiers under elevated temperature lifetest with RF-overdrive

Cited by 5 publications

References 14 publications

Au electromigration and Ti segregation in TiPtAu gate of PHEMTs

Au electromigration and Ti segregation in TiPtAu gate of PHEMTs

The gate metal degradation mechanism and electromigration evaluation of PHEMT devices

Au electromigration and Ti segregation in TiPtAu gate of PHEMTs

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