Degradation of carrier lifetime in irradiated lasers

Pailharey, E.; Baggio, J.; Gill, K.; Vasey, F.

doi:10.1117/12.405347

Cited by 7 publications

(3 citation statements)

References 4 publications

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“…The threshold increase and efficiency loss typically only occur with particles that can cause displacement damage, e.g., neutrons, protons, or pions. Both effects are related to a degradation of carrier lifetime [13], [14] due to introduction of defects in the active volume, as is the case in many types of irradiated semiconductor components.…”

Section: A Radiation Damage Testsmentioning

confidence: 99%

Radiation hardness qualification of InGaAsP/InP 1310 nm lasers for the CMS Tracker optical links

Gill

Grabit

Troska

et al. 2002

IEEE Trans. Nucl. Sci.

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Abstract-The series of validation tests for radiation hardness qualification of lasers for use in 46 000 optical links of the CMS Tracker detector at CERN, Geneva, Switzerland, are presented. These tests included accelerated radiation damage, annealing, and aging studies, simulating the effect of doses and fluences, up to 2 10 14 particles/cm 2 and 100 kGy, accumulated over a ten-year operating lifetime. The worst-case damage effect, in lasers operating closest to the beam-collision point, is expected to be a threshold current increase of under 6 mA. The lasers tested therefore qualify as being sufficiently radiation hard. The qualification tests also form the basis of future radiation hardness assurance of lasers during final production. An advance validation test of lasers from candidate wafers is defined that will confirm the radiation hardness of lasers before a large number of transmitters are assembled from these wafers.

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Section: A Radiation Damage Testsmentioning

confidence: 99%

Radiation hardness qualification of InGaAsP/InP 1310 nm lasers for the CMS Tracker optical links

Gill

Grabit

Troska

et al. 2002

IEEE Trans. Nucl. Sci.

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“…Even though this process would tend to produce a positive photocurrent in the laser cavity, the effect of a simultaneous radiation-induced reduction of the resistivity of the confinement regions is larger and leads to a net decrease in current density, due to carrier leakage from the active volume. 29,30 The higher the dose rate, the larger the resistivity decrease in the confinement areas. 31 At a critical ionizing irradiation (from electron beams rather than gamma rays) dose rate of about 10 11 to 10 12 rad(Si)·s -1 , the net current density of a laser diode decreases to J th , and lasing is temporarily interrupted.…”

mentioning

confidence: 99%

“…In fact, the first such study, 33 which appeared in 1965, was performed at Sandia. There have been several recent reports 30,31,34,35 on the application of this technique to the testing of laser diodes emitting at 1300 nm.…”

mentioning

confidence: 99%

Effects of radiation on laser diodes.

Phifer

2004

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The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-doserate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.3

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Radiation hardness of semiconductor laser diodes for space communication

Li,

Shen,

Sun

et al. 2024

Applied Physics Reviews

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Semiconductor laser diodes (LDs), with merits of little volume, lightweight, low power consumption, ease of modulation, and high data rates, are great candidates for space laser communications. However, operating in a radiation environment can result in various damages to LDs. Hence, the growing focus on satellite laser communications necessitates LDs with improved radiation hardness. This review covers the efforts made in investigating the radiation effects on LDs induced by various types of radiation, including neutrons, γ-rays, protons, electrons, and other radiation particles. The conditions of radiation experiments and the behaviors and mechanisms of the degradation of LD material and device performance after being radiated are surveyed and discussed. It has been revealed that quantum dot (QD) LDs typically exhibit superior radiation tolerance compared to quantum well LDs or LDs with bulk active layers due to the enhanced confinement of carriers and reduced active areas in QD LDs, indicating significant potential for space applications. Furthermore, current challenges and issues in this field are discussed and addressed, providing a perspective and outlook for further research. Our review aims to guide the development of suitable light sources for future space laser communications, fostering high-performance satellite communications networks.

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Degradation of carrier lifetime in irradiated lasers

Cited by 7 publications

References 4 publications

Radiation hardness qualification of InGaAsP/InP 1310 nm lasers for the CMS Tracker optical links

Radiation hardness qualification of InGaAsP/InP 1310 nm lasers for the CMS Tracker optical links

Effects of radiation on laser diodes.

Radiation hardness of semiconductor laser diodes for space communication

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