Degradation of CMOS APS Image Sensors Induced by Total Ionizing Dose Radiation at Different Dose Rates and Biased Conditions

Wang, Zujun; Liu, Changju; Ma, Yan; Wu, Zhijun; Wang, Ying; Benqi, Tang; Liu, Minbo; Liu, Zhiyong

doi:10.1109/tns.2015.2394779

Cited by 19 publications

(9 citation statements)

References 19 publications

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“…It is the successor of the GEANT series of software toolkits developed by European Organization for Nuclear Research (CERN), and it is the first to use an object oriented programming language (C++). It has been used in a large number of experiments and projects in a variety of application domains, including high energy physics, astrophysics, space science, medical physics, and radiation protection [9,10]. The geometry model was established according to pixel geometry, material, and doping concentration.…”

Section: Monte Carlo Modeling Detailsmentioning

confidence: 99%

“…Virmontois et al [8,9] reported the displacement damage effects on the dark current of CISs induced by proton and neutron irradiation, and empirical models were established in order to evaluate the dark current distribution. Wang et al [10,11] reported the TID effects on CISs. The mean dark signal, dark signal non-uniformity (DSNU), dynamic range and output signal voltage versus the TID were presented, and the degradation mechanisms were also analyzed.…”

Section: Introductionmentioning

confidence: 99%

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Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

Xue

Wang

Chen

et al. 2018

Sci. China Inf. Sci.

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The dark signal degradation of the CMOS image sensor (CIS) was induced by neutron radiation, and it was modeled by Geant4, which is a three-dimensional Monte Carlo code. The simplified model of the CIS array was established according to the actual pixel geometry, material, and doping concentration. Nuclear elastic interaction and capture interaction were included in the physical processes, and the displacement damage dose in the space charge region of the pixel was calculated. The mean dark signal and dark signal distribution were modeled using Geant4, and the physical mechanisms were analyzed. The modeling results were in good agreement with the experimental and theoretical results.

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Section: Monte Carlo Modeling Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

Xue

Wang

Chen

et al. 2018

Sci. China Inf. Sci.

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show abstract

“…Therefore, enhancing the SNR and dynamic range of CMOS image sensors is an important objective that manufacturing industry and research and development community are striving for [12,13]. CMOS image sensors, of which nowadays utmost can be devoted to as CMOS APS [14], exploit the same silicon integrated circuit (IC) technology used in microprocessor systems [15]. The attraction is typically owing to the nature of CMOS technology where several millions of transistors can be integrated on a single wafer.…”

Section: Introductionmentioning

confidence: 99%

“…The design technique of CMOS APS has been further divided into four categories: photodiode APS, photogate APS, logarithmic photodiode APS, and pinned photodiode APS [18][19][20]. Electro-optical performance of a photodiode (PD) type APS pixel [21][22] is directly related to physical properties of photodiode diffusion layer. In addition, the APS agreements very low-power and low-voltage operations and is appropriate for monolithic integration, therefore allowing manufacturers to integrate additional functionality on the array and building low-cost camera-on-a-chip [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Design of a Low Noise Active Pixel Sensor using Complementary Metal-Oxide-Semiconductor Technology

Maity¹,

Maity²,

Baishya³

2016

stj

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Abstract-In this paper, our focus is on designing of complementary metal-oxide-semiconductor (CMOS) photodiode based active pixel sensor (APS) and performance analysis and achievements for CMOS image sensor. Different important design parameters like photocurrent, conversion gain, conversion factor, dynamic range, readout speed, and quantum efficiency have been calculated. Noise is also considered for the design at different phase of operations of CMOS APS. Various design parameters of our design are computed and compared with simulated results. Noise calculation shows that the pixel noise is dominated by reset noise.

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“…Devices embedded on spacecraft, space satellites, and space stations are damaged constantly by space radiation as total-ionizing dose (TID) effects [1]- [3]. Recently, radiationhardened SRAM-based field programmable gate arrays (FPGAs) are available for use in space radiation environments [4]- [7].…”

Section: Introductionmentioning

confidence: 99%

Total-ionizing-dose tolerance analysis of an optically reconfigurable gate array VLSI

Watanabe

2015

2015 IEEE International Conference on Aerospace Electronics and Remote Sensing Technology (ICARES)

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Recently, radiation-hardened static random access memory (SRAM) -based field programmable gate arrays (FPGAs) are available for use in space radiation environments. Although such radiation-hardened SRAM-based FPGAs are programmable, the uses of radiation-damaged SRAM-based FPGAs are not allowed as well as application specific integrated circuits (ASICs). Their serial configuration is invariably damaged first by radiation. Therefore, their own configuration becomes impossible. However, if it were possible to use faulty gate arrays, some parts of which become permanently damaged by radiation as totalionizing dose effects, then the total-ionizing dose tolerance of the programmable gate array would be increased drastically. To use a faulty programmable gate array, a parallel configuration architecture must be used instead of serial configuration architectures. If the parallel configuration architecture were used, then even if a part of the configuration circuits were to become damaged, then the other non-damaged gate array could be reconfigured correctly and could then be used. In this case, although the total-ionizing dose tolerance of a gate array VLSI is not varied physically, its allowable total-ionizing dose tolerance of the programmable gate array could be increased. Recently, optically reconfigurable gate arrays (ORGAs) have been undergoing rapid development. Actually, ORGAs can support a perfectly parallel configuration so that an ORGA allows the use of a faulty programmable gate array and thereby increases the total-ionizing dose tolerance of its programmable gate array. This paper presents the theoretical underpinnings of the benefits of parallel configuration on ORGAs in total-ionizing dose tolerance using both the designs of an ORGA and a currently available serial-configuration FPGA.

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Degradation of CMOS APS Image Sensors Induced by Total Ionizing Dose Radiation at Different Dose Rates and Biased Conditions

Cited by 19 publications

References 19 publications

Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

Design of a Low Noise Active Pixel Sensor using Complementary Metal-Oxide-Semiconductor Technology

Total-ionizing-dose tolerance analysis of an optically reconfigurable gate array VLSI

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