Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation

Lo, Chien-Fong; Liu, Lu; Kang, Tsung-Sheng; Ren, F.; Schwarz, Casey M.; Flitsiyan, Elena; Chernyak, Leonid; HongYeol, Kim; Kim, Jihyun; Yun, Sang Pil; Laboutin, Oleg; Cao, Yu; Johnson, J. W.; Pearton, S. J.

doi:10.1116/1.3698402

Cited by 7 publications

(5 citation statements)

References 18 publications

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“…The electrical properties of LEDs start to change after irradiation with 10 16 cm À2 of 10 MeV electrons. [131][132][133][134]145 Taking into account the number of displaced atoms, these threshold doses are in reasonable agreement with the results of neutron and proton irradiation of GaN LEDs. In terms of electron irradiation of HEMTs, doses of 10 16 cm À2 produce decreases in electron mobility of a factor of 2, while gate current and drain-source current both increase.…”

Section: Electron Damagesupporting

confidence: 86%

Review of radiation damage in GaN-based materials and devices

Pearton

Deist

Ren

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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133

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A review of the effects of proton, neutron, c-ray, and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. V

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Section: Electron Damagesupporting

confidence: 86%

Review of radiation damage in GaN-based materials and devices

Pearton

Deist

Ren

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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203

133

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“…These subthreshold characteristics were highly dependent on the reverse bias gate leakage current. The reverse bias gate leakage 13 3.4 37.5 7.6 Â 10 12 6.4 Â 10 18 4750 2 Â 10 14 12.5 57.9 7.3Â10 12 6.2 Â 10 18 1040 current barely increased for the HEMT irradiated with 2 Â 10 14 cm À2 of proton, as shown in Fig. 5.…”

Section: Resultsmentioning

confidence: 70%

“…A lot of work has been done recently on radiation damage of GaN-based devices. 5 The effects of irradiation with various types of ionizing and nonionizing species, such as gamma rays, 6,7 neutrons, 8,9 Ge þ , 10 electrons, 11 Ni, 12 carbon, 13 and protons [14][15][16][17][18][19][20][21][22][23] have been reported. Among these, proton irradiation has gained the most attention.…”

Section: Introductionmentioning

confidence: 99%

Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Hsieh

Hwang

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Proton damage.-A wide range of studies have been performed on proton damaged HEMTs in different proton energy regimes. 5,12,16,[21][22][23][24][25][27][28][29][30][31][32][33][34][35][36][37][42][43][44][45][46][47][49][50][51][52][53][54][55][56][57][58]79 For the high energy protons encountered in space-based applications, AlGaN/GaN HEMTs show decreases in tranconductance (g m ), drain-source current (I DS ), shifts in threshold voltage (V T ) and gate current (I G ) after irradiation with 40 MeV protons at doses equivalent to decades in low-earth orbit. These protons create deep electron traps that increase the HEMT channel resistance and decrease carrier mobility.…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

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285

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation

Cited by 7 publications

References 18 publications

Review of radiation damage in GaN-based materials and devices

Review of radiation damage in GaN-based materials and devices

Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Review—Ionizing Radiation Damage Effects on GaN Devices

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