1984
DOI: 10.1007/bf02396925
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Degradation of Mn-doped BaTiO3 ceramic under a high d.c. electric field

Abstract: A manganese-doped BaTiOa was investigated with regard to the degradation of resistivity under a high d.c. electric field. Degradation was measured as a function of time, composition and temperature, using an electric field of 3 V #m -1. The activation energy of the process was found to be 1.13eV. to clarify the mechanism / against U characteristics and / against Tgraphs of new, degraded and relaxed samples were studied. Electron paramagnetic resonance and potential measurements were found to be useful in descr… Show more

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Cited by 95 publications
(46 citation statements)
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“…Effects of Mn doping in BaTiO 3 have been studied because of extensive changes in electrical and dielectrical properties [3][4][5][6][7][16][17][18]. Numerous workers measured the equilibrium electrical conductivity as a function of Po 2 and confirmed that the p-type conductivity at the Po 2 near stoichiometric composition is proportional to the 1/6th power of Po 2 [5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…Effects of Mn doping in BaTiO 3 have been studied because of extensive changes in electrical and dielectrical properties [3][4][5][6][7][16][17][18]. Numerous workers measured the equilibrium electrical conductivity as a function of Po 2 and confirmed that the p-type conductivity at the Po 2 near stoichiometric composition is proportional to the 1/6th power of Po 2 [5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…Microstructure and electrical properties of Mn-doped BaTiO 3 have been extensively studied by numerous researchers [3][4][5][6][7][8][9][10][11][12][13][14][15]. For the donor-doped positive temperature coefficient of resistance (PTCR) ceramics, manganese depresses the grain size and enhances the electrical resistivity near the Curie temperature of BaTiO 3 [16][17][18][19][20][21][22][23]. For the based-metal-electrode (BME) MLCCs, undoped-perovskite BaTiO 3 materials are reduced and become semiconductors when fired in the protective atmosphere which is to prevent the internal electrodes from being oxidized.…”
Section: Introductionmentioning
confidence: 99%
“…Oxygen vacancies left behind in the dielectrics by this firing atmosphere lower the insulation resistance of the devices and degrade their reliability [3,4,[9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%