Degradation of particle detectors based on a-Si:H by 1.5 Mev He4 and 1 MeV protons

Radiation-induced defects in a-Si:H by 1.5MeV He4 particles studied by photoconductivity and photothermal deflection spectroscopy

“…Following previous similar studies focused on degradation of photoconductivity [6], in the present work we further investigate changes in the subgap density of states distribution and in the minority-carrier properties. The range of particle fluences is also extended.…”