2013
DOI: 10.1016/j.ijleo.2011.11.055
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Degradation of responsivity for photodiodes under intense laser irradiation

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Cited by 13 publications
(5 citation statements)
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“…After the insulation layer is completely ablated, the silicon electrodes on both sides of the focal point are short-circuited, which makes the clock confused and completely ineffective [18]. In general, the complete failure of CCD mainly attribute to the following two reasons [19,20]: the SC between silicon substrate and silicon electrode or the SC between silicon electrodes. In order to investigate the main reasons of combined laser induced CCD damage, we simulate the distribution of stress field and temperature field of CCD in a certain irradiation time, and obtain the expansion degree of transverse and longitudinal regions under different energy densities.…”
Section: Theoretical Simulation Of Combined Laser-induced Ccd Breakdownmentioning
confidence: 99%
“…After the insulation layer is completely ablated, the silicon electrodes on both sides of the focal point are short-circuited, which makes the clock confused and completely ineffective [18]. In general, the complete failure of CCD mainly attribute to the following two reasons [19,20]: the SC between silicon substrate and silicon electrode or the SC between silicon electrodes. In order to investigate the main reasons of combined laser induced CCD damage, we simulate the distribution of stress field and temperature field of CCD in a certain irradiation time, and obtain the expansion degree of transverse and longitudinal regions under different energy densities.…”
Section: Theoretical Simulation Of Combined Laser-induced Ccd Breakdownmentioning
confidence: 99%
“…또한, 근적외선 대역의 레이저를 이용하면 공기 중의 산란이나 흡수가 비교 적 적어 먼 거리에서도 운용이 가능하다 [2,3] . 국내에서는 본 연구진이 CMOS 영상센서를 대상으 로 한 연구가 유일하며 [5] , 국외에서는 포토다이오드에 1064 nm 파장의 펄스 레이저를 조사하였을 때 나타나 는 응답지연과 표면손상에 대한 연구 [6] 와 CCD에 1064 nm 파장의 펄스 레이저를 조사하였을 때 전기적 특성 의 변화 및 LIDT(Laser-Induced Damage Threshold)에 대 하여 분석한 사례가 있다 [1,7] . 그러나 CCD 영상센서를 대상으로 연속발진 레이저에 의한 반응거동을 분석한 연구는 전무하다.…”
Section: 있다 레이저 무기는 이와 같은 미래전의 목적에 부합 하기 때문에 미국과 유럽을 중심으로 활발한 개발연unclassified
“…Specifically, it was observed that the responsivity decreases noticeably due to an increase in the surface recombination velocity caused by defects and thermal breakdown of the PN junction. 12 Furthermore, since a silicon-based PIN detector primarily consists of Si photoelectric devices, it is imperative to comprehend the characteristics of Si when exposed to laser irradiation. For instance, Nivas and co-workers, [13][14][15] Sánchez et al, 16 Halbwax et al, 17 Li et al, 18 and Sardar et al 19 have all studied this.…”
Section: Introductionmentioning
confidence: 99%