Degradation of RF MEMS capacitive switches

Herfst, R.W.

doi:10.3990/1.9789036527507

Cited by 4 publications

(4 citation statements)

References 60 publications

(93 reference statements)

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“…measurement errors are reduced to 0.25% on the amplitude, and to 0.32 mrad on the phase. Further details on the implementation of the correction approach may be found in [7].…”

Section: A Calibration Of the Iq-demodulatormentioning

confidence: 99%

Fast RF-CV Characterization Through High-Speed 1-port S-Parameter Measurements

Herfst

Steeneken

Tiggelman

et al. 2012

IEEE Trans. Semicond. Manufact.

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SummaryWe present a novel, fast, and cost-effective method to measure the capacitance-voltage relation of an electronic device. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. A new way is introduced to correct for non-linearities of the used components. C-V curves are measured in less than a millisecond, with measurement accuracy well below 1%. The technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor.Fast RF-CV Characterization Through High-Speed 1-port S-parameter Measurements Abstract-We present a novel method to measure the capacitancevoltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%.

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“…measurement errors are reduced to 0.25% on the amplitude, and to 0.32 mrad on the phase. Further details on the implementation of the correction approach may be found in [7].…”

Section: A Calibration Of the Iq-demodulatormentioning

confidence: 99%

Fast RF-CV Characterization Through High-Speed 1-port S-Parameter Measurements

Herfst

Steeneken

Tiggelman

et al. 2012

IEEE Trans. Semicond. Manufact.

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“…The devices are supplied by EPCOS AG; they were produced in an intermediate stage of process development and intended for reliability characterization. Further documentation of the switches is found in [6]. The switches have various spring designs, with longer springs going from device 0 to device 3.…”

Section: Introductionmentioning

confidence: 98%

Spring-constant measurement methods for RF-MEMS capacitive switches

Wang

Bielen

Salm

et al. 2016

2016 International Conference on Microelectronic Test Structures (ICMTS)

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In this article we compare three approaches to measure the spring constant in RF MEMS capacitive switches. We use the lowest vibration mode, as obtained from vibrometry; the pull-in voltage; and the low-field capacitancevoltage curve of the device to extract the spring constant. Experimental results are presented for each approach, and FEM model predictions are used to further verify and interpret the findings. Pros and cons of each method are discussed.

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“…The devices are supplied by EPCOS AG; they are produced in an intermediate stage of process development and intended for reliability characterization. Further documentation of the switches is found in [48]. The switches have various spring designs, with longer springs going from device 0 to device 3.…”

Section: Methodsmentioning

confidence: 99%

“…The non-uniformity of charge can be processing related, or because of non-uniform charge injection [46]. There can be large variation of charge at local position during actuation although the net charge is zero, resulting in mechanical deformation (also observed as a narrowing of capacitance-voltage curve) [47,48]. Stiction happens when the mechanical restoration at pull-out is prevented by the charge redistribution as in Fig.…”

Section: Dielectric Chargingmentioning

confidence: 99%

Characterization and reliability studies towards piezoelectrically actuated RF-MEMS switches

Wang¹

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Degradation of RF MEMS capacitive switches

Cited by 4 publications

References 60 publications

Fast RF-CV Characterization Through High-Speed 1-port S-Parameter Measurements

Fast RF-CV Characterization Through High-Speed 1-port S-Parameter Measurements

Spring-constant measurement methods for RF-MEMS capacitive switches

Characterization and reliability studies towards piezoelectrically actuated RF-MEMS switches

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