Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

Lee, Byung Chul; Kim, Chul Min; Jang, Hae‐Dong; Lee, Jae Woo; Joo, Min‐Kyu; Kim, Gyu-Tae

doi:10.1016/j.apsusc.2017.04.126

Cited by 12 publications

(7 citation statements)

References 39 publications

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“…While graphene exhibits the highest carrier mobility ∼200,000 cm 2 V –1 s –1 among all the discovered 2D materials, the lack of a band gap severely limits its application in transistors . In this context, the layered allotrope of phosphorus, i.e., black phosphorus (BP, Figure a) with a tunable direct band gap of ∼1.5–2 eV and carrier mobility of ∼1000 cm 2 V –1 s –1 has attracted research interest as a promising 2D material for transistors powering the next generation of high speed and low power nanoelectronics. − However, the degradation in electronic properties of BP upon exposure to ambient atmosphere has been a major impediment. − A fundamental understanding of the mechanisms and factors influencing the degradation of BP are hence imperative to develop mitigation strategies and enable applications. , …”

Section: Introductionmentioning

confidence: 99%

“…Further, Kuntz et al studied the oxidation of BP flakes upon exposure to O 2 , H 2 O/N 2 , and H 2 O/O 2 environments and found that high purity oxygen effectively oxidized the BP surface while water oxidized pre-existing defects such as steps or edges in the BP . Part of the lack of understanding on the mechanisms of BP oxidation stems from the inherent ex situ nature of experiments where decoupling the effects of light, oxygen, and water during ambient air exposure is nontrivial. ,,,,,,,− ,− …”

Section: Introductionmentioning

confidence: 99%

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Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via In Situ Transmission Electron Microscopy

Naclerio

Zakharov

Kumar

et al. 2020

ACS Appl. Mater. Interfaces

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Layered two-dimensional (2D) black phosphorus (BP) exhibits novel semiconducting properties including a tunable bandgap and high electron mobility. However, the poor stability of BP in ambient environment severely limits potential for application in future electronic and optoelectronic devices. While passivation or encapsulation of BP using inert materials/polymers has emerged as a plausible solution, a detailed fundamental understanding of BP’s reaction with oxygen is imperative to rationally advance its use in applications. Here, we use in situ environmental transmission electron microscopy to elucidate atomistic structural changes in mechanically exfoliated few-layered BP during exposure to varying partial pressures of oxygen. An amorphous oxide layer is seen on the actively etching BP edges, and the thickness of this layer increases with increasing oxygen partial pressure, indicating that oxidation proceeds via initial formation of amorphous P x O y species which sublime to result in the etching of the BP crystal. We observe that while few-layered BP is stable under the 80 kV electron beam (e-beam) in vacuum, the lattice oxidizes and degrades at room temperature in the presence of oxygen only in the region under the e-beam. The oxidative etch rate also increases with increasing e-beam dosage, suggesting the presence of an energy barrier for the oxidation reaction. Preferential oxidative etching along the [0 0 1] and [0 0 ] crystallographic directions is observed, in good agreement with density functional theory calculations showing favorable thermodynamic stability of the oxidized BP (0 0 1) planes compared to the (1 0 0) planes. We expect the atomistic insights and fundamental understanding obtained here to aid in the development of novel approaches to integrate BP in future applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via In Situ Transmission Electron Microscopy

Naclerio

Zakharov

Kumar

et al. 2020

ACS Appl. Mater. Interfaces

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“…Therefore, the method allows accurate estimation of contact resistance as well as the low-field mobility of low-dimensional material-based devices. 28,29 In the range of low-field limit, Y is given by…”

Section: Resultsmentioning

confidence: 99%

Chemical Doping Effects of Gas Molecules on Black Phosphorus Field-Effect Transistors

Kim

Lee

Kim

2018

ECS J. Solid State Sci. Technol.

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Black phosphorus (BP) is a recently rediscovered layered material with outstanding optical and electrical properties. Its large adsorption energy and high surface-to-volume ratio have motivated chemical sensing and doping applications. We analyzed the charge transport properties as BP-based field-effect transistors (FETs) were chemically doped by adsorption of gas molecules. The electron-withdrawing NO 2 and the electron-donating NH 3 molecules were applied to observe p-doping and n-doping behaviors, respectively, in BP channel layer. Y-function method was used to extract the device parameters, allowing us to elucidate the chemical doping effects of different types of gas molecules in BP FETs. Excellent sensing ability of BP-based devices to gas molecules was also demonstrated. Our results provide a facile method to control the device properties of BP-based FET via the chemical doping. Two-dimensional (2D) materials have attracted a significant attention for their unique optical and electrical properties. The atomic layers are held to each other by van der Waals interaction and therefore can be easily exfoliated into high-quality nanoscale films. With their atomic thickness, 2D materials have inherent high surface-to-volume ratios that can be a great advantage in semiconductor optoelectronics requiring nanoscale devices with high performance.1,2 The higher the surface-to-volume ratio, the more active sites will be available for sensing in a fixed size device. Different 2D layered materials including graphene and transition metal dichalcogenides (TMDCs) were applied to chemical and gas sensors and showed excellent sensing properties. 3-5Black phosphorus (BP) has been highlighted as a promising 2D material with thickness-dependent direct bandgap and excellent electrical properties comparable to those of graphene or other layered materials. The outstanding performance as a transistor material was proved by its high carrier mobility and drain current modulation reaching 1,000 cm 2 /V·s and 10 5 , respectively. 6,7 Its distinctive sensitivity was also observed to be higher than other 2D materials as it has larger adsorption energy and puckered structure that leads to even higher surface-tovolume ratio and increased adsorption sites. 8,9 Thus, there have been various studies on high-performance BP-based chemical sensors; ultrasensitive and selective responses to NO 2 gas, water molecules or ions were reported.10-13 Abbas et al. reported on chemical sensing of NO 2 using BP-based field-effect transistors (FETs) and Cho et al. demonstrated superior chemical sensing performance of BP by comparing to those of molybdenum disulfide and graphene. 8,13 Cui et al. also studied ultrahigh sensitivity along with the thickness-dependent sensing properties of BP.14 Lee et al. fabricated suspended BP-based sensors to enhance the sensing performance. 15Although the high performance of BP-based chemical sensors has been demonstrated through previous reports, the chemical doping effects and the change in the device parameters caused by...

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“…Owing to excellent properties including the optical property, thermal property, mechanical property, biocompatibility, etc. [108], apart from the electrical property, BP has been broadly applied to FETs [109,110,111], batteries [112,113], photodetectors [114], gas sensors [115], protease detection, and inhibitor screening [116].…”

Section: Doping With Two-dimensional Nanomaterialsmentioning

confidence: 99%

Approaches to Enhancing Gas Sensing Properties: A Review

Yuan

Meng

et al. 2019

Sensors

114

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A gas nanosensor is an instrument that converts the information of an unknown gas (species, concentration, etc.) into other signals (for example, an electrical signal) according to certain principles, combining detection principles, material science, and processing technology. As an effective application for detecting a large number of dangerous gases, gas nanosensors have attracted extensive interest. However, their development and application are restricted because of issues such as a low response, poor selectivity, and high operation temperature, etc. To tackle these issues, various measures have been studied and will be introduced in this review, mainly including controlling the nanostructure, doping with 2D nanomaterials, decorating with noble metal nanoparticles, and forming the heterojunction. In every section, recent advances and typical research, as well mechanisms, will also be demonstrated.

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Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

Cited by 12 publications

References 39 publications

Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via In Situ Transmission Electron Microscopy

Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via In Situ Transmission Electron Microscopy

Chemical Doping Effects of Gas Molecules on Black Phosphorus Field-Effect Transistors

Approaches to Enhancing Gas Sensing Properties: A Review

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