Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing

Würfl, Joachim; Kurpas, P.; Brunner, F.; Mai, M.; Rudolph, Matthias; Weyers, M.

doi:10.1016/s0026-2714(01)00081-6

Cited by 5 publications

(5 citation statements)

References 10 publications

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“…On the contrary, a wealth of information exists when devices are taken just below their catastrophic limit and useful evolution of degradation results. We find it remarkable that degradation signatures on devices operated briefly just below their catastrophic limit have corresponding parallels in less accelerated studies that we have referenced [1][2][3][4][5][6][7][8][9][10][11]. Plus, we find two other electrical signatures that have been less commonly reported, if at all.…”

Section: Discussionsupporting

confidence: 57%

“…However, it is almost always accompanied by significant current gain degradation at all current levels [5][6][7][8][9]. The last example of stress-induced degradation as illustrated in Figure 6.…”

Section: Resultsmentioning

confidence: 99%

“…Since InGaP/GaAs heterojunction bipolar transistors (HBTs) are utilized in a wide variety of RF and other applications, a great deal has been learned about their reliability [1][2][3][4][5][6][7][8][9][10][11]. Nevertheless, this knowledge is limited by the fact that most reliability studies heavily emphasize the stress-related evolution of a single parameter, the DC current gain, β.…”

Section: Introductionmentioning

confidence: 99%

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A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs

et al. 2013

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Step-stress experiments on high-voltage Npn InGaP/GaAs HBTs are shown to reveal a number of degradation mechanisms, singly or in combinations: defect buildup in the emitter depletion region, defect buildup in the neutral base region, possible degradation of Ohmic contacts or increase in epitaxial layer resistances. Defect buildup in the emitter depletion region often precedes other types of degradation. Two less commonly reported degradation mechanisms are also suggested: base Ohmic metal punch-through to the collector and deterioration of the die attach material. It was found that the vast majority of devices failed within 5% of a maximum attainable power level, but when stressed just shy of this catastrophic level, electrical characteristics typically degraded gradually.

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Section: Discussionsupporting

confidence: 57%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs

et al. 2013

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“…During this wafer-level burn-in study, the types of degradation encountered have been a subset of those described in a previous publication [12] from our research laboratory as well as external studies carried out under a large number of conditions (affecting acceleration factors) [1,[3][4][5][6][7][8][9][10]. In general, gradual degradation of the low current region of the Gummel curves, gradual reduction of the BE breakdown voltage, and gradual increase in the offset voltage were observed in greater detail than what is discussed in this paper.…”

Section: Discussionmentioning

confidence: 99%

“…Since InGaP/GaAs heterojunction bipolar transistors (HBTs) are utilized in a wide variety of RF and other applications, a great deal has been learned about their reliability [1][2][3][4][5][6][7][8][9][10][11]. Nevertheless, this knowledge is limited by the fact that most reliability studies heavily emphasize the stress-induced evolution of a single parameter, the DC current gain.…”

Section: Introductionmentioning

confidence: 99%

(Invited) (ECS Electronics & Photonics Division Award )Wafer-Level Step-Stressing of InGaP/GaAs HBTs

et al. 2014

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Wafer-level step-stress experiments on high voltage Npn InGaP/GaAs HBTs are presented. A methodology utilizing brief, monotonically increasing stresses and periodic, interrupted parametric characterization is presented. The method and various examples of step-stressed HBTs illustrate the value of the technique for screening the reliability of HBT wafers. Degradation modes observed in these InGaP/GaAs HBTs closely correspond to a subset of those in other, longer types of reliability experiments and can be relevant in a reliability screen. A statistical sampling of HBT wafers reveals a consistently realized critical destructive limit over a very narrow power range, which indicates that thermal stress is the main cause of degradation. When stepped just shy of the destructive limit, electrical characteristics are capable of revealing gradual degradation. The end state of stressing typically involves shorting of both the base-emitter and base-collector junctions. Interrupted characterization revealed cases where baseemitter shorts preceded base-collector shorts and other cases where base-collector shorts occurred first. Examples of degradation include reductions in reverse breakdown voltage, increases in the offset voltage, and drops in current gain. These wafer-level stepstress techniques show promise for reducing the large time lag between wafer fabrication and useful reliability screening in HBTs.

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Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE

Brunner

Braun

Kurpas

et al. 2003

Microelectronics Reliability

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Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing

Cited by 5 publications

References 10 publications

A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs

A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs

(Invited) (ECS Electronics & Photonics Division Award )Wafer-Level Step-Stressing of InGaP/GaAs HBTs

Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE

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