Degradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures

Makeev, Mstislav; Мешков, С. А.; Sinyakin, Vladimir

doi:10.1088/1742-6596/917/9/092004

Cited by 8 publications

(2 citation statements)

References 10 publications

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“…Ohmic contacts degradation mathematical model makes it possible to obtain the kinetics of RTD specific contact resistance as a function of time and temperature and is described by equation [18][19][20]:…”

Section: The Technique Of Reliability Prediction Of Rfid Passive Tagsmentioning

confidence: 99%

Reliability prediction of RFID passive tags power supply systems based on RTD under given operating conditions

2018

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Section: The Technique Of Reliability Prediction Of Rfid Passive Tagsmentioning

confidence: 99%

Reliability prediction of RFID passive tags power supply systems based on RTD under given operating conditions

2018

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“…The described methodology was developed on the example of micro-and nanoelectronics devices -SHF radio signals mixer and rectifier, in which the resonanttunnelling diode (RTD) was used as a nonlinear element. The methodical basis was the results of the research of the RTD degradation processes under the influence of temperature factor and ionizing radiation, carried out by the authors [8][9][10][11][12], and the RTD diagnostic model based on these results [13][14].…”

Section: Main Partmentioning

confidence: 99%

Methodology of technological and operational factors accounting in the process of complex optimal design of microand nanodevices manufactured using group technologies

Мешков

2018

MATEC Web Conf.

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The problem of providing key quality indicators (indicators of purpose, manufacturability, reliability) of micro-and nanodevices at the design stage is considered. The limitations imposed by a group technology production on methods ensuring serial production availability and reliability of micro- and nanodevices are described. The design of micro-and nanodevices methodology that allows to ensure the optimal balance between serial production availability in the given production conditions and time to failure in the specified operation conditions under given restrictions on the device purpose indicators by taking into account the technological and operational factors is described.

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Study of resonant-tunneling diodes I-V curves kinetics under destabilizing factors influence

Cherkasov

Мешков

Makeev

et al. 2020

J. Phys.: Conf. Ser.

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Resonant-tunneling diodes (RTD) are prospective EHF and UHF electronics elements. Using RTDs as radio frequency converter’s nonlinear element would allow to improve converter’s performance indices and extend its frequency range up to THz. The purpose of research is investigating kinetics of the RTD’s I-V curve under given operating conditions, such as high temperature and ionizing radiation’s influence. For this case, special mathematical models are submitted. These models describe RTD I-V curves’s degradation under high temperature and ionizing radiation’s influence. Basing on described models a program package allowing to simulated RTD I-V curves’s kinetics under listed factors’ influence was developed. Results’ adequacy is verified by comparison with experimental data.

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Degradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures

Cited by 8 publications

References 10 publications

Reliability prediction of RFID passive tags power supply systems based on RTD under given operating conditions

Reliability prediction of RFID passive tags power supply systems based on RTD under given operating conditions

Methodology of technological and operational factors accounting in the process of complex optimal design of microand nanodevices manufactured using group technologies

Study of resonant-tunneling diodes I-V curves kinetics under destabilizing factors influence

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