Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Cassidy, Daniel T.; Landesman, Jean-Pierre

doi:10.1364/ao.394624

Cited by 7 publications

(14 citation statements)

References 54 publications

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“…The results from fits of the 3D FEM simulations of the DOP of luminescence to the measured data are consistent with the theoretical work reported in [16]. This theoretical work, which is based on Bahder's analytic expressions for the strain dependence of the conduction and valence band dispersions [17,18], gives an expression for the strain dependence of the DOP that is more complicated than the expression that previously was thought to hold [13].…”

Section: Introductionsupporting

confidence: 85%

“…R a = 1 is expected if d = 2.4 b, as recommended by Vurgaftman et al ( [23], Table I, p. 5825), and if the analysis presented in Ref. [16] is correct.…”

Section: Fits To the Datamentioning

confidence: 69%

“…This theoretical work, which is based on Bahder's analytic expressions for the strain dependence of the conduction and valence band dispersions [17,18], gives an expression for the strain dependence of the DOP that is more complicated than the expression that previously was thought to hold [13]. A confirmation of the applicability of [16] for the strain dependence of the DOP of luminescence from GaAs has not, to our knowledge, been reported.…”

Section: Introductionmentioning

confidence: 93%

“…For luminescence from the normal to a GaAs {110} facet and assuming the recommended relationship of d = 2.4 b ( [23], Table I, p. 5825), the predicted relationships between the degree of polarization (DOP), the rotated degree of polarization (ROP), and strain ( [16], Section 3.D.4), are…”

Section: Dop As a Function Of Strainmentioning

confidence: 99%

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Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe

Cassidy

Landesman

Mokhtari³

et al. 2023

Optics

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Measurements of the cathodoluminescence (CL) and the degree of polarization (DOP) of (CL) from the facet of a GaAs substrate and in the vicinity of a SiN stripe are reported and analyzed. The deformation induced by the SiN stripe is estimated by fitting the measured DOP to 3D finite element method (FEM) simulations. The deformation is found to be more complex than an initial condition of biaxial stress in the SiN. A ratio of fit coefficients suggests that the dependence of DOP on strain is described by equations presented in Appl. Opt. 59, 5506–5520 (2020). These equations give a DOP that is either proportional to a weighted difference of the principal components of strain in the measurement plane, or proportional to the shear strain in the measurement plane, depending on the chosen orientation of the measurement axes.

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Section: Introductionsupporting

confidence: 85%

“…R a = 1 is expected if d = 2.4 b, as recommended by Vurgaftman et al ( [23], Table I, p. 5825), and if the analysis presented in Ref. [16] is correct.…”

Section: Fits To the Datamentioning

confidence: 69%

Section: Introductionmentioning

confidence: 93%

Section: Dop As a Function Of Strainmentioning

confidence: 99%

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Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe

Cassidy

Landesman

Mokhtari³

et al. 2023

Optics

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“…Recent theoretical work 24 indicates that the relation between the DOP and the normal strain coefficients might be more complex than given by eq. 3 for a (110) surface, due to the loss of square symmetry.…”

Section: A (110) Cross Sectional Mappingsmentioning

confidence: 99%

Mechanical stress in InP and GaAs ridges formed by reactive ion etching

Landesman

Fouchier

Pargon

et al. 2020

Journal of Applied Physics

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The mechanical deformation induced by reactive ion etching (RIE) of rectangular ridge waveguides in GaAs and InP has been investigated by photoluminescence and cathodoluminescence techniques. Several trends were identified and are discussed.First, it is concluded that the RIE process itself is the source of the mechanical deformation. A compressive volume change occurs mainly within the ridge (with a maximum close to the vertical etched sidewalls), extending outside the ridges, up to several µm below the bottom etched surface. An anisotropic deformation also appears, again mainly close to the etched sidewalls and below the bottom etched surface. A narrow area under tensile stress was also identified, localized outside the ridges and in a shallow region below the bottom etched surface. Cumulative, overlapping effects are seen, inside the ridges where the compressive stress fields originating at the vertical etched sidewalls contribute to an overall compression inside the ridge which increases as the ridge width decreases. In addition, a tensile stress is also observed outside the ridge, strongly enhanced by the presence of neighbouring ridges. These conclusions are significant for the design of photonic structures. Because of the photoelastic effect, which is important in GaAs and InP, the properties of devices such as waveguides might be affected by the mechanical stress described herein.

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Influence of Material Properties on Surface Chemistry Induced Circular Dichroism in Halide Perovskite: Computational Insights

Forde,

Evans,

Nie

et al. 2024

Nano Lett.

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The chirality transfer phenomenon is attractive for enhancing the optical functionality of nanomaterials by inducing sensitivity to the circular polarization states of photons. An underexplored aspect is how material properties of the achiral semiconductor impact the induced chiroptical signatures. Here we apply atomistic time-dependent density functional theory simulations to investigate the material properties that influence the chiroptical signatures of a lead halide perovskite nanocrystal with a chiral molecule bound to the surface. First, we find that both lattice disorder created by surface strain and halide substitution can increase the chiroptical response of the perovskite quantum dots by an order of magnitude. Both phenomena are attributed to a broadening of the density of the electronically excited states. Second, the intensity of the anisotropy spectra decreases with increasing dot size with a power law decay. Overall, these insights can be used to help guide experimental realization of highly resolvable polarized optical features in semiconducting nanomaterials.

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Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

Cited by 7 publications

References 54 publications

Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe

Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe

Mechanical stress in InP and GaAs ridges formed by reactive ion etching

Influence of Material Properties on Surface Chemistry Induced Circular Dichroism in Halide Perovskite: Computational Insights

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