Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

Abstract

The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiOx) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiOx film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.

Atomic-level quantized reaction of HfOx memristor

“…Among emerging memory technologies, [6][7][8][9][10][11][12] the memristor has the potential to become the ultimate next-generation nonvolatile memory due to its attributes of simple structure, high speed, and high endurance. [13][14][15][16][17][18][19][20][21][22] In particular, the memristor exhibits ultra-high switching speed because the resistive switching behaviors are dominated by variation of several atoms in the device. According to the previous reports, the speed of resistive switching of memristor can be less than 10 ns.…”

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

“…Besides its excellent insulating property, a novel SiO xbased resistive switching phenomenon has recently been demonstrated in vacuum. [4][5][6] Although many resistive switching mechanisms have been reported for various materials, 7 even for SiO x system, [8][9][10] the exact switching mechanisms in SiO x -based ReRAM are still not well understood due to its unique electrical characteristics (e.g., resistive switching behavior only in vacuum ambient and reset voltage that is always larger than set voltage in unipolar operation). 11 In this paper, the oxygen content effect in SiO x -based ReRAM has been investigated by controlling the oxygen flow during reactive sputter deposition.…”

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

“…[1][2][3][4][5][6][7][8][9][10][11][12] Researchers have done a lot of research on RRAM including ways to modify its characteristics. [13][14][15][16][17][18][19][20][21] The formation and rupture of filament are considered to be the reason of resistance switching process in resistance random access memory. 22,23 However, the instantaneous resistance switching is so fast that transcends the measurement capability of modern instruments.…”