Abstract:Since recessed channel array transistor (RCAT) was adopted from 100 nm feature size, gate-induced-drain-leakage (GIDL) has been the major cause of refresh fail. [1] The process of inner-gate-recess was adapted and GIDL in RCAT structure has been remarkably reduced by lowering electric field at overlap region. Fig.1 (a) and (b) show the VSEM image of inner-gate-recessed-RCAT and the electric field simulation, respectively. The process of recessing gate-poly was executed at both cell array transistor such as RCA… Show more
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