Delta-doped quantum wire tunnel junction for highly concentrated solar cells

Abstract

We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar concentration. The combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells' advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.

Optical properties of n-type asymmetric triple δ-doped quantum well under external fields

“…Among other reports, the reader may also find some other significant studies on δdoping. For instance, the investigation of δ-doped quantum wire tunnel junction for high concentrated solar cells [8]. Besides, the analysis of nonlinear optical features of n-type asymmetric triple δ-doped GaAs QW appears in [9].…”

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells*

“…These systems are essential in the development of optoelectronic devices since its introduction by Wood et al [12] The bases for the engineering of optical devices are the intersubband transitions in semiconductor quantum-well structures. [13][14][15] The delta-doped systems have been under study, mainly because of their electronic transport and optoelectronic properties, [16][17][18][19][20] in the engineering of electronic and optical devices such as field-effect transistors, light detectors, light-emitting diodes, multilayer heterostructures, and other new generation devices. [21][22][23][24][25] In the engineering of optoelectronic devices, sandwiched layered structures of a quantum well, e.g., p-type and n-type GaAs, can form laser diodes.…”