Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study

The growth of high quality GaMnAs layers and heterostructures by molecular beam epitaxy

“…The behaviour of Mn during the growth of GaMnAs is similar to many other dopants e.g. Sn-doped GaAs [10], where the solubility limit increases with decreasing temperature [8]. In such cases, incorporation into the growing film is from an enhanced surface concentration.…”

State of the Art Molecular Beam Epitaxy of III-V Compounds

“…Considerable progress has been made recently in improving the properties of 2DEGs and 2DHGs formed at the inverted interface by reducing the tendency of dopants to diffuse and segregate [11], using low temperature growth techniques [12]. It is now possible to grow a variety of coupled electron-electron and electron-hole gas stuctures using similar methods.…”

Quantum Effect Physics, Electronics and Applications: Proceedings of the International Workshop Held in Luxor, Egypt on January 6-10, 1992

“…A likely mechanism for these unintentionally placed impurities is Si segregation on the growing front. On the basis of the data presented by Harris et al (1991) we would expect Si segregation to give rise to -1-2 donors in the quantum well of a device with area 0.1Ijm 2 .…”