Demonstration and Modelling of Excellent RF Switch Performance of 22nm FD-SOI Technology for Millimeter-Wave Applications

Yadav, Sameer; Chow, W.H.; Bellaouar, A.; Wong, J.; Chen, T.; Sekine, Shinichi; Schwan, C.; Chin, Mei See; Workman, G.O.; Chew, Kok Wai

doi:10.1109/essderc.2019.8901823

Cited by 10 publications

(4 citation statements)

References 7 publications

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“…8 show that the BFMOAT device has slower IL roll off versus frequency, thanks to its lower parasitics. This is supported by the conclusions from [35], and marks the BFMOAT device as the preferred choice over SLVT and RVT for mm-wave switches in the 40-100 GHz range. In the lower frequency range RVT and SLVT switches outperform the BFMOAT ones thanks to an applied back gate bias, that enables them to achieve approximately 0.2 dB advantage in IL from DC to 20 GHz.…”

Section: High Frequency Front-end Module In Soi Cmossupporting

confidence: 58%

“…Three types of SPDTs were designed, based on the three key mm-wave FET devices offered by the foundry library (Fig. 7): (i) the conventional-well device with regular-VT (RVT), (ii) the flipped-well devices with super-low-VT (SLVT), and (iii) the BFMOAT which lacks the back-gate contact as the substrate region directly beneath the BOX is specially treated in order to reduce substrate parasitics [35]. The devices are compared in terms of SPDT FoMs, with a focus on the impact of back-gate bias.…”

Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 99%

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Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Raskin

2022

IEEE J. Electron Devices Soc.

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Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Today, Partially Depleted Silicon-on-Insulator (SOI) MOSFET is the mainstream technology for RF SOI systems. Fully Depleted (FD) SOI MOSFET is foreseen as one of the most promising candidates for the development of future lower power wireless communication systems operating in the millimeter-wave range. The high frequency performances of FD SOI transistors are presented at room but also at cryogenic and high temperature. Recently published results for FD SOI switches and low noise amplifiers are summarized. And finally, the potential interest and challenges to move from standard to high resistivity FD SOI substrates are discussed.

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Section: High Frequency Front-end Module In Soi Cmossupporting

confidence: 58%

Section: High Frequency Front-end Module In Soi Cmosmentioning

confidence: 99%

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Raskin

2022

IEEE J. Electron Devices Soc.

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“…The 22nm FDSOI CMOS technology by GlobalFoundries (22FDX) provides n-MOSFET device option with a specially treated region (BFMOAT) in order to reduce the parasitic effects in the substrate network [6]. Supported by the conclusion in [7], the BFMOAT n-MOSFET can be a valid option with respect to the common SLVT or RVT n-MOSFETs for mm-wave switches.…”

Section: Low-loss and High-isolation Switchmentioning

confidence: 99%

“…In the recent years, some wideband switches were introduced and they adopt inductors/transformers and transmission lines in order to achieve good performance over frequency [1][2][3][4][5], but with a negative impact as for the area on chip. Fully-depleted siliconon-insulator (FDSOI) with ultra-thin body and buried-oxide layer allows taking most of the advantage of SOI technology [5] and has been used to implement prior-art switches [1,3,4,[6][7][8].…”

Section: Introductionmentioning

confidence: 99%

A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS

Nhut

Zito

2023

IEEE Trans. Circuits Syst. II

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This brief reports a compact DC-110GHz single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch adopts solely three n-MOSFETs, two of them with a special device option to reduce the substrate parasitic effects, and a third n-MOSFET in parallel to the gate resistance of the series n-MOSFET to improve isolation. Unlike prior wideband mmwave switches, it does not make use of any large passive components, such as spiral inductors, transformers and transmission lines, which are prone to large parasitic effects, including losses, and require large area on silicon. Altogether, the novel switch circuit allows a very compact design, low losses and high isolation performance. The switch exhibits an insertion loss lower than 3.1 dB, an isolation better than 22 dB, and a return loss better than 12 dB, over the entire frequency range from DC to 110 GHz. The area on die amounts to 160 µm 2 , that is up two or more orders of magnitude smaller than prior wideband mm-wave SPST switches.

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Introduction to 5G applications and beyond

Collaert

2024

New Materials and Devices Enabling 5G Applications and Beyond

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Demonstration and Modelling of Excellent RF Switch Performance of 22nm FD-SOI Technology for Millimeter-Wave Applications

Cited by 10 publications

References 7 publications

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS

Introduction to 5G applications and beyond

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