Demonstration of 3.5 µm Ga
 1-
 
 x
 
 In
 
 x
 
 Sb/InAssuperlattice diodelaser

Hasenberg, T. C.; Chow, D. H.; Kost, Alan; Miles, R. H.; West, L.

doi:10.1049/el:19950221

Cited by 58 publications

(14 citation statements)

References 8 publications

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“…4 However, the atomic-scale interfacial properties of these superlattice structures have been found to be of crucial importance in determining material and device properties. Because both group-III and group-V constituents change from one superlattice layer to the next, two distinct bond configurations-InSb-like and Ga 1Ϫx In x As-like-can be present at each interface.…”

Section: Introductionmentioning

confidence: 99%

Correlation between atomic-scale structure and mobility anisotropy inInAs/Ga1−x

Lew

Zuo

et al. 1998

Phys. Rev. B

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We have performed detailed characterization of atomic-scale interface structure in InAs/Ga 1Ϫx In x Sb superlattices using cross-sectional scanning tunneling microscopy ͑STM͒ and established a semiquantitative correlation between interface structure and transport properties in these structures. Quantitative analysis of STM images of both ͑110͒ and (110) cross-sectional planes of the superlattice indicates that interfaces in the (110) plane exhibit a higher degree of interface roughness than those in the ͑110͒ plane and that the Ga 1Ϫx In x Sb-on-InAs interfaces are rougher than the InAs-on-Ga 1Ϫx In x Sb interfaces. The roughness data are consistent with anisotropy in interface structure arising from anisotropic island formation during growth and, in addition, a growth-sequence-dependent interface structure arising from differences in interfacial bond structure between the two interfaces. Low-temperature Hall measurements performed on these samples demonstrate the existence of a substantial lateral anisotropy in mobility that is in semiquantitative agreement with modeling of interface roughness scattering that incorporates our quantitative measurements of interface roughness using STM.

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Section: Introductionmentioning

confidence: 99%

Correlation between atomic-scale structure and mobility anisotropy inInAs/Ga1−x

Lew

Zuo

et al. 1998

Phys. Rev. B

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“…[1][2][3][4][5][6][7][8] For pulsed optical pumping, laser emission at ϭ4.5 m has been observed up to 310 K, with a peak power exceeding 2 W per facet at 200 K. For diode operation, 3.2 m emission has been obtained up to 255 K in pulsed mode and 180 K cw, 5 while a device emitting at 2.93 m has operated up to 260 K pulsed, and emitted Ͼ800 mW peak output power per facet at 100 K. 8 Suppressed Auger coefficients have been experimentally demonstrated for both test structures 9,10 and actual lasers. 6 Theoretical investigations [11][12][13][14] have modeled the gain, Auger rates, thresholds, and slope efficiencies, and have predicted that the performance of optimized type-II devices should significantly exceed that of analogous type-I mid-IR lasers.…”

Section: Introductionmentioning

confidence: 99%

Role of internal loss in limiting type-II mid-IR laser performance

Bewley

Vurgaftman

Felix

et al. 1998

Journal of Applied Physics

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Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations Appl.We report an experimental and theoretical investigation of internal losses in optically pumped type-II lasers with InAs/GaSb/Ga 1Ϫx In x Sb/GaSb superlattice active regions. Whereas the losses are found to be moderate at 100 K (11-14 cm Ϫ1 ), they increase rapidly with increasing temperature ͑to 50-120 cm Ϫ1 at 200 K͒. Comparison with a detailed numerical simulation shows that the internal losses play a much more important role than Auger recombination or carrier/lattice heating in limiting the laser performance at high temperatures. Calculations of the temperature-dependent intervalence absorption cross sections show that losses of the magnitude observed experimentally can easily occur if one does not take special care to avoid resonances in all regions of the Brillouin zone. Practical design guidelines are presented. The superlattice lasers yield maximum peak output powers of up to 6.5 W per facet at 100 K and 3.5 W per facet at 180 K, threshold incident pump intensities as low as 340 W/cm 2 at 100 K, and Shockley-Read lifetimes Ͼ30 ns at 100 K. The Auger coefficients are suppressed ͑р1.6ϫ10 Ϫ27 cm 6 /s at Tϭ260 K͒ despite the intervalence resonances which produce the high internal losses.

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“…In recent years type-II broken-gap GaInAsSb/InAs heterostructures and GaInSb/InAs superlattices have been studied intensively as promising materials for middle infrared light sources and photodetectors [6][7][8]. However, the magneto-transport properties have received almost no previous attention.…”

Section: Introductionmentioning

confidence: 99%