Demonstration of 80 Gbps NRZ-OOK Electro-Absorption Modulation of InP-on-Si DFB Laser Diodes

Shahin, Mahmoud; Vaskasi, Javad Rahimi; Kerrebrouck, Joris Van; Abbasi, Amirali; Gasse, Kasper Van; Muneeb, Muhammad; Breyne, Laurens; Ossieur, Peter; Yin, Xin; Bauwelinck, Johan; Roelkens, Günther; Morthier, Geert

doi:10.1364/cleo_si.2019.sth4n.1

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2023

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“…The simplicity of EAM operation through reverse-biased light absorption has also made them prime candidates for usage on the silicon platform [5]. EAMs using InP have also been shown to be successfully integrated onto the silicon platform using die-bonding [6,7] and micro-transfer printing to much success [8].…”

Section: Introductionmentioning

confidence: 99%

Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

Mulcahy,

Shi,

Peters

et al. 2023

Photonics

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This paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via S11 characterisation using a vector network analyser (VNA). Optimisations of the contact scheme lead to the parasitic capacitance being reduced to <10 fF. EAMs using this contact scheme are fabricated and characterised using S11 measurements. These S11 measurements are used to simulate S21 measurements, which predict a f3dB bandwidth of near 80 GHz using an equivalent circuit model.

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Section: Introductionmentioning

confidence: 99%

Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

Mulcahy,

Shi,

Peters

et al. 2023

Photonics

View full text Add to dashboard Cite

show abstract

Demonstration of 80 Gbps NRZ-OOK Electro-Absorption Modulation of InP-on-Si DFB Laser Diodes

Abstract: High-speed electro-absorption modulation of a heterogeneously integrated InP-on-Si DFB laser diode is used for the transmission of an 80 Gbps NRZ-OOK signal over 2 km of NZ-DSF link below the hard-decision forward-error-correction threshold.

Cited by 1 publication

References 5 publications

Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

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