Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors

Deal, W.R.; Mei, X.B.; Radisic, V.; Leong, K.M.K.H.; Sarkozy, S.; Gorospe, B.; Lee, J; Liu, P H; Yoshida, W.; Zhou, Joe; Lange, M.; Uyeda, J.; Lai, R.

doi:10.1109/lmwc.2010.2045597

Cited by 98 publications

(28 citation statements)

References 10 publications

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“…HEMT results are found in [4], [19], [29], [44]- [46], [55], [56], and [59]- [61], having gate lengths of 30-50 nm. Exciting new results from a Teledyne InP DHBT TMIC indicate 11 dB noise figure at 300 GHz-the best reported noise figure for an HBT S-MMIC to date [12].…”

Section: A Gain and Noise Figurementioning

confidence: 99%

“…The solid curve is the average noise obtained from experimental results from Weinreb below 100 GHz [48]. Data points from Teledyne, NGC, Fraunhofer, HRL, NRAO, and JPL are indicated [4], [12], [29], [44]- [46], [49]- [62]. Lowest noise figures reported for the -band include those from 50-nm gate length mHEMTs from Fraunhofer [50]- [52] and 35-nm gate length HEMTs from a NGC/JPL/NRAO collaboration [55], [56], having a noise figure of 2-2.5 dB.…”

Section: A Gain and Noise Figurementioning

confidence: 99%

See 1 more Smart Citation

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

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Abstract-We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years. Highlights include the best reported data from heterojunction bipolar transistor (HBT) circuits, high electron mobility transistor (HEMT) circuits, and metamorphic HEMT (mHEMT) amplifier circuits. We discuss packaging techniques for the various technologies in waveguide modules and describe the best reported noise figures measured in these technologies. A consequence of THz transistors, namely ultra-low-noise at cryogenic temperatures, will be explored and results presented. We also present a short review of power amplifier technologies for the THz regime. Finally, we discuss emerging materials for THz amplifiers into the next decade.

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Section: A Gain and Noise Figurementioning

confidence: 99%

Section: A Gain and Noise Figurementioning

confidence: 99%

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

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“…It also makes CPW and CPS versatile for designing components and chips based on different substrates and packaging them into a system. In communication systems, CPW in a ground-signal-ground (GSG) configuration is normally used for designing amplifiers [2][3][4][5], frequency doublers [6,7], mixers [8,9], power DACs (PDACs) [10,11] and interposer connections between different components [12,13]. Being different from CPW, CPS as well as ACPS are in a ground-signal (GS) configuration and they are used for designing baluns [14][15][16][17], antennas [18][19][20], and the electrodes of Mach-Zehnder modulators (MZMs) [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Ultra-wideband coplanar waveguide-to-asymmetric coplanar stripline transition from DC to 165 GHz

Dong

Johansen

Zhurbenko

2018

Int. J. Microw. Wireless Technol.

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This paper presents an ultra-wideband coplanar waveguide (CPW)-to-asymmetric coplanar stripline (ACPS) transition based on aluminum nitride (AlN) substrate. The concepts of designing CPW, ACPS, and CPW-to-ACPS transition are explained. In order to suppress parasitic modes, vias going through AlN substrate are added along the ground traces. The signal trace is tapered out and chamfered to reduce the reflection caused by the termination of ground trace. The CPW-to-ACPS transition is designed, fabricated, and measured in a back-to-back configuration. The fabricated CPW-to-ACPS transition can provide a bandwidth of 165 GHz with an associated insertion loss of 3 dB.

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“…Their (0.1-10) × 10 12 Hz frequency range is suitable for a wide variety of applications, such as wireless communications, spectroscopy, biomedical and molecular imaging and high-speed signal processing. Consequently, Gunn diodes [37,38], resonant tunnelling diodes [39,40], quantum cascade lasers [41,42] and emitters based on transistors [43,44] have been investigated for use in THz oscillators, and a high electron mobility transistor [45][46][47], an HBT [48,49] operated at several hundred GHz and a metal-insulator-metal THz detector [50,51] have been developed.…”

Section: Introductionmentioning

confidence: 99%

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Ohno

Oyama

2012

Science and Technology of Advanced Materials

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In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm −2 . They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

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Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors

Cited by 98 publications

References 10 publications

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Ultra-wideband coplanar waveguide-to-asymmetric coplanar stripline transition from DC to 165 GHz

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

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