Demonstration of a silicon-based quantum cellular automata cell

Mitic, M.; Cassidy, Maja; Petersson, K. D.; Starrett, R.P.; Gauja, E.; Brenner, R.; Clark, R. G.; Dzurak, A. S.; Yang, C. H.; Jamieson, David N.

doi:10.1063/1.2219128

Cited by 70 publications

(39 citation statements)

References 15 publications

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“…We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.Keywords: quantum dots, silicon, nanoelectronics, quantum computing.In the last three decades lithographically defined semiconductor quantum dots have been the focus of extensive research efforts [1][2][3], and have attracted large interest for a number of applications, such as solid-state quantum computing [4], quantum dot cellular automata [5][6][7], quantum electrical metrology [8], as well as cryogenic temperature measurement [9] and regulation [10]. The electrical properties of these systems are typically investigated either via electron transport between two-dimensional electron gas (2DEG) reservoirs tunnel coupled to the dots [11] or by detecting charge and spin states with on-chip electrometers [12].…”

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confidence: 99%

Charge state hysteresis in semiconductor quantum dots

Yang¹,

Rossi²,

Lai³

et al. 2014

Applied Physics Letters

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Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.Keywords: quantum dots, silicon, nanoelectronics, quantum computing.In the last three decades lithographically defined semiconductor quantum dots have been the focus of extensive research efforts [1][2][3], and have attracted large interest for a number of applications, such as solid-state quantum computing [4], quantum dot cellular automata [5][6][7], quantum electrical metrology [8], as well as cryogenic temperature measurement [9] and regulation [10]. The electrical properties of these systems are typically investigated either via electron transport between two-dimensional electron gas (2DEG) reservoirs tunnel coupled to the dots [11] or by detecting charge and spin states with on-chip electrometers [12]. In the context of quantum computing, the use of charge sensing has become the method of choice to perform non-invasive measurements of the coherent quantum bit states that exist in the dots [13,14]. Remote detection has, therefore, made it unnecessary to have an electrical current flow and has led to the realization of systems in which only one lead or none is used [12,[15][16][17][18][19][20][21]. While the absence of 2DEG reservoirs can be beneficial to both suppress thermal fluctuations induced by electrical noise [22,23] and conveniently scale up these systems, hysteretic behaviour is observed that may complicate the tuning of charge states [24,25]. Such hysteresis can, however, be exploited for the implementation of single-electron memory devices [26,27].Here, we investigate a silicon double quantum dot (DQD) that is tunnel-coupled to a single 2DEG reservoir and capacitively coupled to a single-electron transistor (SET) used to detect individual charge transitions in the DQD. When the system is operated in the few-electron regime the stability diagram reveals hysteresis in the DQD occupancy, with the occurrence of charge transitions depending upon the history of the charge states. We present a model that accounts for the characteristic features observed by extending the conventional description of electron transport through double-lead DQDs [2]. We also show that this system functions as a single-electron Set/Reset (S/R) memory latch.Our devices are metal-oxide-semiconductor (MOS) planar structures fabricated on a high-purity, near-intrinsic natural silicon substrate. Three layers of Al/Al y O ...

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confidence: 99%

Charge state hysteresis in semiconductor quantum dots

Yang¹,

Rossi²,

Lai³

et al. 2014

Applied Physics Letters

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“…Control of the individual electron occupancy numbers {n A , m A } within the doubledot system is provided by two surface gates, lebeled V L and V R in Fig.1a, while an Al-AlO x single electron transistor (SET), also positioned on the device surface, provides non-invasive double-dot charge-state sensing 19 . The devices also incorporate a second double-dot structure (upper section of Fig.1(b,c)) which was not used for the experiments reported here, but can be used for demonstration of quantum cellular automata 12 .…”

Section: Introductionmentioning

confidence: 99%

“…Such devices are attractive due to their compatibility with scalable Si microfabrication technologies and the scope for miniaturization down to single phosphorous donors 13,14 leading to ultra dense, extremely lowpower electronic devices. To date, silicon double-dots 10,11 and QCA cells 12 , defined using phosphorous implantation, have been demonstrated, while there are ongoing efforts towards miniaturizing the dots 15 in order to access a regime where silicon-based quantum bits 16,17 may be demonstrated.…”

Section: Introductionmentioning

confidence: 99%

“…In previous work, our group has developed a variety of single-electron devices based on nanoscale phosphorous-implanted dots in silicon 10,11,12 . Such devices are attractive due to their compatibility with scalable Si microfabrication technologies and the scope for miniaturization down to single phosphorous donors 13,14 leading to ultra dense, extremely lowpower electronic devices.…”

Section: Introductionmentioning

confidence: 99%

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Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots

et al. 2008

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We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers.Metallic control gates, together with an Al-AlO x single-electron transistor, were positioned on the substrate surface, capacitively coupled to the buried dots. The individual double-dot charge states were probed using source-drain bias spectroscopy combined with non-invasive SET charge sensing. The system was measured in linear (V SD = 0) and non-linear (V SD ≠ 0) regimes allowing calculations of the relevant capacitances. Simultaneous detection using both SET sensing and source-drain current measurements was demonstrated, providing a valuable combination for the analysis of the system. Evolution of the triple points with applied bias was observed using both charge and current sensing. Coulomb diamonds, showing the interplay between the Coulomb charging effects of the two dots, were measured using simultaneous detection and compared with numerical simulations. Mitic et al.

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“…A pair of Al/AlOx SETs have also been adopted for reading charge polarization in Al/AlOx based quantum cellular automata (QCA) system [8,9] and Si:P QCA system [10]. A pair of SETs is definitely useful to detect single-charge polarizations in large dots in QCA system.…”

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confidence: 99%

Study of Single-Charge Polarization on a Pair of Charge Qubits Integrated Onto a Silicon Double Single-Electron Transistor Readout

Kawata

Tsuchiya

Oda

et al. 2008

IEEE Trans. Nanotechnology

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Abstract-This paper reports on integration of two Si charge quantum bits (qubits) and series-connected double single-electron transistors (DSETs) as a readout for the first time. We design and fabricate the DSETs composed of double quantum dots (DQDs) connected in series with two side gates patterned on a silicon-on-insulator substrate.The individual SETs are sufficiently sensitive to detect single-charge polarization on the adjacent charge qubits. The fabricated DSETs are characterized at the temperature of 4.2 K by changing the gate voltages applied to two side gates.The measured Coulomb oscillation characteristics exhibit a clearly-defined hexagon pattern, manifesting that the patterned DQDs of the DSETs indeed act as interacting charging islands. These results agree very well with the results of equivalent circuit simulation combined with three-dimensional capacitance simulation. Furthermore, we simulate how single-charge configurations on two charge qubits are sensed with the DSETs by using the measured electrical characteristics for the DSET and the equivalent model. Finally, the scaling-up properties of the proposed system to multiple single-electron transistors (MSETs) is discussed by simulating Triple Single-Electron Transistors (TSETs) with triple qubits.

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Demonstration of a silicon-based quantum cellular automata cell

Cited by 70 publications

References 15 publications

Charge state hysteresis in semiconductor quantum dots

Charge state hysteresis in semiconductor quantum dots

Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots

Study of Single-Charge Polarization on a Pair of Charge Qubits Integrated Onto a Silicon Double Single-Electron Transistor Readout

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