Demonstration of an athermal waveguide optical isolator on silicon platform

Furuya, K.; Kato, Kaori; Shoji, Yuya; Mizumoto, Tetsuya

doi:10.1109/ecoc.2015.7341886

Cited by 3 publications

(1 citation statement)

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“…Furuya et al measured the temperature dependence of the refractive index and Faraday rotation of Ce:YIG to design a temperature-insensitive isolator. They measured the temperature coefficients of the refractive index and Faraday rotation to be 9.1×10 −5 K −1 and 44 deg cm −1 K −1 , respectively, at λ=1550 nm [68]. By balancing the temperature dependence of the magneto-optical phase shift and phase bias in the backward direction, they demonstrated an MZI-based isolator having a constant backward transmittance at temperatures between 20 and 60 °C.…”

Section: Discussion Of State-of-art Device Performancementioning

confidence: 99%

Optical nonreciprocal devices based on magneto-optical phase shift in silicon photonics

Shoji

Miura

Mizumoto

2015

J. Opt.

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Silicon waveguide optical nonreciprocal devices that use the magneto-optical phase shift are reviewed. The phase shift caused by the first-order magneto-optical effect is effective in realizing optical nonreciprocal devices on semiconductor waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer contributes to the large penetration of the optical field into a magneto-optical material used as an over-cladding layer. This enhances the magneto-optical phase shift and, hence, contributes greatly to reducing the device footprint. A surface-activated direct bonding technique plays a key role in the fabrication of magneto-optical nonreciprocal devices. This technique makes it possible to use a high-quality single-crystalline magneto-optical garnet that exhibits a large first-order magneto-optical effect. An optical isolator based on the magneto-optical phase shift was demonstrated in a silicon waveguide with an optical isolation ratio as high as 30 dB and an insertion loss of 13 dB at a wavelength of λ = 1548 nm. Furthermore, a four-port optical circulator was demonstrated with maximum isolation ratios of 33.5 and 29.1 dB in the cross and bar ports, respectively, at λ = 1543 nm.

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Section: Discussion Of State-of-art Device Performancementioning

confidence: 99%