Demonstration of an On-Chip TE-Mode Optical Circulator

Ma, Rui; Reniers, Sander; Shoji, Yuya; Mizumoto, Tetsuya; Jiao, Yuqing; Tol, J.J.G.M. van der; Williams, Kevin

doi:10.1109/jqe.2023.3238739

Cited by 6 publications

(4 citation statements)

References 16 publications

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“…Reducing the thickness of the BCB layer as spun on the wafer has limitations. Examples of bonding of a die 25) with 25 nm thick BCB or a 4 × 4 mm garnet 26) with 125 nm thick BCB were demonstrated previously. However, in practice, it is highly challenging to achieve a defect-free bonding of a non-planar 3 inch wafer when using BCB thickness equal to or less than the maximum step height in the wafer topography.…”

Section: Methodsmentioning

confidence: 75%

Efficient heat sink by ultrathin BCB bonding for InP membrane lasers

Zozulia,

de Vries,

Wang

et al. 2024

Jpn. J. Appl. Phys.

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Wafer bonding is a key process in heterogeneous photonic integration and benzocyclobutene (BCB) is widely used for adhesive wafer-to-wafer bonding when it comes to handling complex topography on both wafers. However, until now a major drawback of bonding with BCB was the high thermal resistance of lasers due to the low thermal conductivity of BCB. We demonstrate, that by optimizing the membrane device topography and introducing the BCB reflow step into the process flow it is possible to achieve full planarization of 1 $\mu$m topography at the wafer scale while ensuring only 250 nm of BCB between the laser p-contact and the substrate. We show experimentally, that the thermal impedance of 500 $\mu$m long DFB laser was reduced from 585 K/W to 271 K/W, and there is room to reduce it further to less than 150 K/W by adjusting the BCB thickness and changing the substrate to SiC.

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Section: Methodsmentioning

confidence: 75%

Efficient heat sink by ultrathin BCB bonding for InP membrane lasers

Zozulia,

de Vries,

Wang

et al. 2024

Jpn. J. Appl. Phys.

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“…We designed two waveguide structures on the InP-on-insulator platform, corresponding to the feasible processes of direct bonding [ 39 , 40 ] and BCB adhesive bonding [ 36 , 41 ], respectively, as shown in Figure 2 a,b. For the direct-bonded waveguide structure, a single crystalline layer of Ce:YIG was grown on a (111)-oriented substituted gadolinium gallium garnet (SGGG) substrate.…”

Section: Resultsmentioning

confidence: 99%

“…Then, a layer of adhesion promoter AP3000 was applied and gently baked at 135 °C for 5 min to enhance the adhesion of BCB. Finally, under vacuum and continuous pressure, the Ce: YIG mold was placed into contact with the upper surface of the BCB [ 36 ]. Both waveguide structures exhibited asymmetric refractive index distributions in the y-direction and the underlying SiO 2 cladding was thick enough to block out the influence of the substrate.…”

Section: Resultsmentioning

confidence: 99%

“…Heterogeneous integration of InP-based active-layer lasers with SiO 2 /Si substrates has reached the commercial stage [ 33 , 34 , 35 ]. Reniers et al developed an on-chip magneto-optical circulator on the InP-on-insulator platform with good performance [ 36 ]. However, there remains an absence of development and simulation of integrated optical isolators.…”

Section: Introductionmentioning

confidence: 99%

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On-Chip Broadband, Compact TM Mode Mach–Zehnder Optical Isolator Based on InP-on-Insulator Platforms

Chen,

Liu,

Zhao

et al. 2024

Nanomaterials

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An integrated optical isolator is a crucial part of photonic integrated circuits (PICs). Existing optical isolators, predominantly based on the silicon-on-insulator (SOI) platform, face challenges in integrating with active devices. We propose a broadband, compact TM mode Mach–Zehnder optical isolator based on InP-on-insulator platforms. We designed two distinct magneto-optical waveguide structures, employing different methods for bonding Ce:YIG and InP, namely O2 plasma surface activation direct wafer bonding and DVS-benzocyclobutene (BCB) adhesive bonding. Detailed calculations and optimizations were conducted to enhance their non-reciprocal phase shift (NRPS). At a wavelength of 1550 nm, the direct-bonded waveguide structure achieved a 30 dB bandwidth of 72 nm with a length difference of 0.256 µm. The effects of waveguide arm length, fabrication accuracy, and dimensional errors on the device performance are discussed. Additionally, manufacturing tolerances for three types of lithographic processes were calculated, serving as references for practical manufacturing purposes.

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Polarization management in silicon photonics

Shahwar,

Yoon,

Akkanen

et al. 2024

npj Nanophoton.

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Polarization management plays a key role in various applications, such as optical communications, imaging, and sensing. It not only mitigates detrimental effects (e.g., polarization mode dispersion in optical communication) but also enables advanced functionalities, such as polarization multiplexing and optical isolation. Herein, we review the state-of-the-art approaches for on-chip polarization management. Additionally, we discuss strategies for developing non-reciprocal photonic devices and the challenges associated with monolithic integration in photonics circuits.

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Demonstration of an On-Chip TE-Mode Optical Circulator

Cited by 6 publications

References 16 publications

Efficient heat sink by ultrathin BCB bonding for InP membrane lasers

Efficient heat sink by ultrathin BCB bonding for InP membrane lasers

On-Chip Broadband, Compact TM Mode Mach–Zehnder Optical Isolator Based on InP-on-Insulator Platforms

Polarization management in silicon photonics

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