Abstract:Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5 K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the incorporation of Gd in GaN leads to the generation of three types of donor like defects that result in neutral donor bound excitonic features in low temperature PL. The study reveals that the rate of spin-flip scattering for all the three excitonic features becomes almost B-independent… Show more
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