Demonstration of Defect-Free and Composition Tunable GaxIn1–xSb Nanowires

Ghalamestani, Sepideh Gorji; Ek, Martin; Ganjipour, Bahram; Thelander, Claes; Johansson, Jonas; Caroff, Philippe; Dick, Kimberly A.

doi:10.1021/nl302497r

Cited by 47 publications

(65 citation statements)

References 37 publications

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“…3) demonstrates that the thicker nanowires tend to be longer. This phenomenon has also been reported for the Ga-catalyzed growth of GaAsP nanowires by MBE [29] and for the Au-catalyzed growth of InAs/InSb heterostructure nanowires by chemical beam epitaxy (CBE) [30] and InGaSb nanowires by MOCVD [31]. The reason is mainly attributed to the lower effective supersaturation (Δ μ ) in the smaller catalytic droplets.…”

Section: Resultssupporting

confidence: 60%

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

Yang

2017

Nanoscale Res Lett

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We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 °C exhibit larger diameters than those grown at 520 °C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 °C are longer than those grown at 520 °C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-2207-5) contains supplementary material, which is available to authorized users.

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Section: Resultssupporting

confidence: 60%

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

Yang

2017

Nanoscale Res Lett

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“…InSb nanocubes [47] and diamond-shaped GaInSb NW segments [48] based on radial overgrowth have also been reported before.…”

Section: Discussionsupporting

confidence: 57%

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures

Shi¹,

Zhang²,

Lu³

et al. 2016

Nano Online

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In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

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“…Therefore, easy and simple processes in the growth and fabrication of NW devices should be considered. 8 Among various semiconductor NW materials, Sb-based ternary III−V NWs have received a great deal of attention in recent years for their potential in a variety of applications, such as field effect transistors (FETs), 9,10 tunnel diodes, 11 and optical detectors. 12 However, reports on GaAsSb NWs have been mostly concerned with NW growth 13,14 and detailed studies aimed at simultaneously understanding their electronic and optoelectronic properties, whereas applying them in devices has not been reported yet.…”

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confidence: 99%

Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

et al. 2015

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Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p-n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.

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Demonstration of Defect-Free and Composition Tunable Ga_xIn_1–xSb Nanowires

Cited by 47 publications

References 37 publications

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures

Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

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