Demonstration of electric double layer gating under high pressure by the development of field-effect diamond anvil cell

Abstract

We have developed an EDLT-DAC that enables us to control the carrier density in the various materials even under high pressure by a novel combination of an electric double layer transistor (EDLT) and a diamond anvil cell (DAC). In this study, this novel EDLT-DAC was applied to a Bi thin film, and here we report the first field-effect under high pressure in the material to our knowledge. Our EDLT-DAC is a promising device for exploring new physical phenomena such as high transition-temperature superconductivity.Strategic engineering the band structure and as well as the position of the Fermi level plays a crucial role for the exploration of novel phenomena, such as high transitiontemperature (Tc) superconductivity (HTS). Applying pressure and/or tuning the carrier density is known to be effective for controlling the electronic structure. Recent evolution of the pressure generator and the field-effect device provided alternative route for controlling the electronic structure of a material other than chemical doping. Such devices have allowed us to reach even intrinsically unstable phases in a materials.

Experimental Observation of Pressure-Induced Superconductivity in Layered Transition-Metal Chalcogenides (Zr,Hf)GeTe4 Explored by a Data-Driven Approach

“…The applications of this material based on the specific features of the TMDs are expected, for example, fabrication of electric double-layer transistors under high pressure. 63,64 ■ ASSOCIATED CONTENT * sı Supporting Information…”

“…The continuous discovery of superconductivity on (Zr,Hf)­GeTe 4 , followed by SnBi 2 Se 4 , PbBi 2 Te 4 , and AgIn 5 Se 8 , indicate the effectiveness of the data-driven approach for the exploration of superconducting materials. The applications of this material based on the specific features of the TMDs are expected, for example, fabrication of electric double-layer transistors under high pressure. , …”