Demonstration of electron filtering to increase the Seebeck coefficient in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>In</mml:mi><mml:mn>0.53</mml:mn></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mn>0.47</mml:mn></mml:msub><mml:mi>As</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi>In</mml:mi><mml:mn>0.53</mml:mn></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mn>0.28</mml:mn></mml:msub><mml:msub><mml:mi>Al</mml:mi><mml:mn>0.19</mml:mn></mml:msub><mml:mi>As<

Zide, Joshua M. O.; Vashaee, Daryoosh; Bian, Zhixi; Zeng, Gehong; Bowers, John E.; Shakouri, Ali; Gossard, A. C.

doi:10.1103/physrevb.74.205335

Cited by 320 publications

(172 citation statements)

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“…The figure of merit for thermoelectric materials has the form of ZT¼ S 2 sT/k, where S is the Seebeck coefficient, s is the electrical conductivity, and k is the thermal conductivity. The embedded semimetallic nanoparticles can provide carrier doping to increase s, electron energy filtering to increase S [2], and phonon scattering to decrease k [3]. When these interrelated parameters are optimized through careful materials selection and growth design, the ZT of the resulting nanocomposites can be enhanced with respect to the original semiconductor matrix.…”

Section: Introductionmentioning

confidence: 99%

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Liu¹,

Ramu²,

Bowers³

et al. 2011

Journal of Crystal Growth

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a b s t r a c tWe report the molecular beam epitaxy (MBE) growth and the comparative systematic study of the electrical and thermoelectric characterizations of ScAs:In 0.53 Ga 0.47 As and ErAs:In 0.53 Ga 0.47 As nanocomposites. The peak room-temperature power factor of ScAs:InGaAs is 38% comparing to that of ErAs:InGaAs. The carrier concentration change of the nanocomposites versus the ScAs and ErAs incorporation levels below 2.2% is explained as due to the formation of nanoparticles with different sizes and densities. The carrier concentration difference between the two types of nanocomposites at the same incorporation level of ScAs and ErAs is explained by the size difference between the ScAs and ErAs nanoparticles.

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Section: Introductionmentioning

confidence: 99%

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Liu¹,

Ramu²,

Bowers³

et al. 2011

Journal of Crystal Growth

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“…[29] In thermoelectric material, the band alignment in thermoelectric composite materials is very important, affecting the carrier transport mechanism. [30][31][32][33][34] For example, the nano-sized metal in thermoelectric material acts as a potential barrier to change the electron relaxation time. [32] The energy dependent transmission through metal nanoparticle can act as the energy filter for charge transport and the power factor can be enhanced especially in super-lattice structure.…”

Section: Introductionmentioning

confidence: 99%

Work function of bismuth telluride: First-principles approach

Ryu

2018

Journal of the Korean Physical Society

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First-principles approach is demonstrated to calculate the work function of Bi 2 Te 3 . The reference potential and the vacuum energy levels are extracted from the Bi 2 Te 3 (0001) surface structure using the reference potential method based on the density functional theory. The oneshot G O W O many-body perturbation theory is used to place the bulk band edge energies with respect to the reference level and the vacuum energy. At last, the work function of 5. 301 -5.131 eV is predicted for Bi 2 Te 3 (0001) surface and compared to various elements.

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“…The micron-scale and nanometer-scale inclusions in the nanocomposite facilitate some of the limitations that otherwise arise from interrelated a, s and k in their counterpart bulk materials. [27][28][29] The nanocomposite thermoelectric materials exhibit several requisite features for the optimization of a high ZT, such as, (1) numerous grain boundaries which can scatter phonons effectively for the reduction in k, 30,31 (2) mechanisms of energy dependent scattering of electrons at interfaces between the matrix and nanoinclusions i.e., an electron ltering effect 32,33 for improvement of the power factor (a 2 s), (3) an electron injecting phenomenon induced by the nanoinclusions, (4) a quantum connement regime which alters the electronic structure and phonon dispersion relationship, 7,29,34 (5) morphological tailoring of nanocomposite thermoelectric materials due to dimensional reduction, grain renement and size reduction of a second phase.…”

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confidence: 99%

Enhanced thermoelectric performance of a new half-Heusler derivative Zr₉Ni₇Sn₈ bulk nanocomposite: enhanced electrical conductivity and low thermal conductivity

2014

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Varying the valence electron concentration per unit cell (VEC) in a half-Heusler (HH) material gives a large number of structures and substructures that can be exploited to improve the thermoelectric performance.Herein, we studied Zr 9 Ni 7 Sn 8 with VEC ¼ 17.25, which is smaller than 18 for normal ZrNiSn half-Heusler, to explore the structural modifications for improvement of thermoelectric performance. The structural analysis employing XRD, SEM and TEM confirms the resulting material to be a composite of HH and Ni 3 Sn 4 -type phases. Rietveld analysis estimates the volume fraction of HH to be 75.6 AE 1.2% and 24.6 AE 0.8% for Ni 3 Sn 4 phase. Interestingly, the present composite results in a substantial increase in electrical conductivity (s) by $75% and a drastic reduction in thermal conductivity (k) by $56%, leading to a thermoelectric figure of merit (ZT) of 0.38 at 773 K, which is $85% higher than in normal HH ZrNiSn.

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Demonstration of electron filtering to increase the Seebeck coefficient inIn0.53Ga0.47As∕In0.53Ga0.28Al0.19As<

Cited by 320 publications

References 20 publications

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Work function of bismuth telluride: First-principles approach

Enhanced thermoelectric performance of a new half-Heusler derivative Zr₉Ni₇Sn₈ bulk nanocomposite: enhanced electrical conductivity and low thermal conductivity

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Demonstration of electron filtering to increase the Seebeck coefficient inIn0.53Ga0.47As∕In0.53Ga0.28Al0.19As<

Cited by 320 publications

References 20 publications

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

Work function of bismuth telluride: First-principles approach

Enhanced thermoelectric performance of a new half-Heusler derivative Zr9Ni7Sn8 bulk nanocomposite: enhanced electrical conductivity and low thermal conductivity

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Enhanced thermoelectric performance of a new half-Heusler derivative Zr₉Ni₇Sn₈ bulk nanocomposite: enhanced electrical conductivity and low thermal conductivity