Demonstration of &gt; 48GHz Single-Drive Push-Pull Silicon Mach-Zehnder Modulator with Low V&lt;inf&gt;Π&lt;/inf&gt;L

Farias, Giovanni B. de; Bustamante, Yesica R. R.; Andrade, Hening A. de; Moura, Uiara Celine de; Freitas, Alexandre P.; Motta, Diogo de A.

doi:10.1109/group4.2018.8478725

Cited by 6 publications

(2 citation statements)

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“…The dopants are reduced where it leads to high absorption loss and increased at places that leads to high capacitance [5]. Doping concentration, doping pattern and intrinsic gap play a significant role in determining the performance of a phase shifter [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. The primary two types are the vertical and lateral PN junction.…”

Section: Introductionmentioning

confidence: 99%

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Carrier depletion type PIN phase shifter in silicon MZM for 200 Gbps operation

Sugesh¹,

Sivasubramanian²,

Balaji³

et al. 2021

IJNT

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Silicon-based photonic modulators are a primary choice for on-chip optical devices with CMOS fabrication compatibility. The phase shifter in a silicon photonics modulator plays a significant role in determining the efficiency of the modulator to meet the optical data communication's future demands. Obtaining high extinction ratio (ER) and with acceptable bit error rate (BER) at low voltage and low loss was kept as the primary objective for the proposed PIN phase shifter in an unbalanced silicon Mach-Zehnder modulator. The phase shifter length was kept at 2 mm, and the carrier doping region was reduced to decrease the carrier absorption loss. The concentration of P and N in the phase shifter was set to 7 × 10 17 cm -3 and 5 × 10 17 cm -3 , and the

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Section: Introductionmentioning

confidence: 99%

“…The interleaved PIN junction increases the capacitance at the cost of power consumption and reduced bandwidth and has design challenges [7,9]. De Farias et al [18] demonstrated that silicon modulators could perform for high-speed operations.…”

Section: Introductionmentioning

confidence: 99%