J. Mater. Chem. C
 2024
DOI: 10.1039/d4tc01319k
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Demonstration of high-performance STO-based WORM devices controlled by oxygen-vacancies and metal filament growth

Chih-Chieh Hsu,
Xiu-Ming Wen,
Kai-Zer Xiao
et al.

Abstract: Herein, we propose high-performance Ti/STO/n+-Si and Ag/STO/n+-Si write-once-read-many-times devices, where the resistance transition mechanisms are controlled by oxygen vacancies in the STO layer and metal atoms from the electrochemically active...

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