2009
DOI: 10.1016/j.infrared.2009.09.007
|View full text |Cite
|
Sign up to set email alerts
|

Demonstration of large format mid-wavelength infrared focal plane arrays based on superlattice and BIRD detector structures

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
14
0
1

Year Published

2011
2011
2021
2021

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 28 publications
(15 citation statements)
references
References 10 publications
0
14
0
1
Order By: Relevance
“…The detector structures were grown in a Veeco Applied-Epi Gen III molecular beam epitaxy (MBE) chamber equipped with valved cracking sources for the group V Sb 2 and As 2 fluxes, as well as dual In sources for independently varying the growth rates of GaInSb and InAs growth rates [3]. Growth was performed on 75 mm diameter Te-doped n-type GaSb (1 0 0) substrates.…”
Section: Megapixel Mid-wave Superlattice Focal Plane Arraysmentioning
confidence: 99%
See 1 more Smart Citation
“…The detector structures were grown in a Veeco Applied-Epi Gen III molecular beam epitaxy (MBE) chamber equipped with valved cracking sources for the group V Sb 2 and As 2 fluxes, as well as dual In sources for independently varying the growth rates of GaInSb and InAs growth rates [3]. Growth was performed on 75 mm diameter Te-doped n-type GaSb (1 0 0) substrates.…”
Section: Megapixel Mid-wave Superlattice Focal Plane Arraysmentioning
confidence: 99%
“…Growth was performed on 75 mm diameter Te-doped n-type GaSb (1 0 0) substrates. The superlattice device recipe consists of a 0.5 lm Be-doped GaSb buffer layer, followed by a p-i-n superlattice (18 Å, 22 Å)-InAs/GaSb with the first 80 periods Be doped in the GaSb layers, 200 un-doped periods, and the final 80 periods doped with Te in the InAs layers [3]. The overall periodicity of the structure was measured by the X-ray diffraction fringe spacing of the superlattice peaks and it is in good agreement with the recipe.…”
Section: Megapixel Mid-wave Superlattice Focal Plane Arraysmentioning
confidence: 99%
“…Absorbers are crucial components in photovoltaic and bolometric light detectors, [1][2][3] and thus invaluable for a wide range of applications, such as energy conversion systems, 4,5 IR imaging devices 6,7 for early-stage cancer diagnosis [11][12][13] as well as bio-sensing. [8][9][10] This vast applications potential has spurred intensive research efforts for new efficient absorber designs across the electromagnetic (EM) spectrum.…”
Section: Introductionmentioning
confidence: 99%
“…There have been numbers of studies reported on focal plane array (FPA) applications for high quality T2SL structures up to date these includes single colour and dual colour InAs/GaSb SL in mid-wavelength and long wavelength infrared spectral range. 2,3,5,6 On the other hand, defining the spatial band alignment of InAs/GaSb T2SL as well as band gap energies and SL minibands are crucially important to obtain carrier wave functions and overlap integrals that effect the optical transition and carrier transport. Recently, we have investigated carriers overlap on InAs/AlSb/GaSb based T2LS p-i-n photodiode where GaSb/InAs layers are confined by thin AlSb barriers.…”
Section: Introductionmentioning
confidence: 99%