Demonstration of Lateral IGBTs in 4H-SiC

Chu, K.R.; Lee, Wen-Shan; Cheng, Chien‐Hong; Chen, Huang-Chin; Zhao, Feng; Lee, Lurng-Shehng; Chen, Young-Shying; Lee, Chwan-Ying; Tsai, Ming-Dar

doi:10.1109/led.2012.2230240

Cited by 17 publications

(9 citation statements)

References 11 publications

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“…Also, SiC insulated-gate bipolar transistor (IGBT) has already been developed in some labs. 2,[5][6][7][8] Wafer bonding plays a significant role in Si device fabrication and integration, similarly SiC wafer bonding will also be indispensable with further commercial development of SiC devices. To date, only a few research about SiC bonding have been published.…”

Section: Introductionmentioning

confidence: 99%

Silicon carbide wafer bonding by modified surface activated bonding method

Suga

Fujino

et al. 2015

Jpn. J. Appl. Phys.

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4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding between the SiC wafers with tensile strength greater than 32 MPa was demonstrated at room temperature under 5 kN force for 300 s. Almost the entire wafer has been bonded very well except a small peripheral region and few voids. The interface structure was analyzed to verify the bonding mechanism. It was found an amorphous layer existed as an intermediate layer at the interface. After annealing at 1273 K in vacuum for 1 h, the bonding tensile strength was still higher than 32 MPa. The interface changes after annealing were also studied. The results show that the thickness of the amorphous layer was reduced to half after annealing.

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Section: Introductionmentioning

confidence: 99%

Silicon carbide wafer bonding by modified surface activated bonding method

Suga

Fujino

et al. 2015

Jpn. J. Appl. Phys.

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“…1f. In the last step, the ohmic contact formation on SiC usually needs a rapid thermal annealing at ∼1273 K. 24 In addition, the fabrication of electronics elements could also be done together with MEMS structure formation after wafer bonding process. However, it should be noted that the activation process after ion implantation needs an annealing at extreme high temperature, ∼1973 K. 14 Therefore, in this case, the wafer bonding should avoid any interfacial layer with a low melting-point or a large thermal mismatch compared with SiC.…”

mentioning

confidence: 99%

Direct Wafer Bonding of SiC-SiC by SAB for Monolithic Integration of SiC MEMS and Electronics

Iguchi

Nakazawa

et al. 2016

ECS J. Solid State Sci. Technol.

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Although the monolithic integration of silicon carbide (SiC) Micro-Electro-Mechanical Systems (MEMS) and SiC electronics is very promising, it is still very challenging due to the absence of suitable bulk machining technology of SiC. In this research, wafer bonding was proposed to assist the monolithic integration of SiC MEMS and SiC electronics by the formation of a suspended epitaxial SiC membrane. However, currently, SiC-SiC wafer bonding is still very difficult, especially for its direct wafer bonding. Surface activated bonding (SAB) method was applied to realize the direct wafer bonding of SiC-SiC at room temperature. The bonding energy of ∼1.4 J/m2 was obtained without orientation dependence. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa and could be improved by rapid thermal annealing to the values higher than 21.6 MPa. The bonding mechanisms were investigated through Monte Carlo simulation, interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX), and in-situ analysis on the activated SiC surfaces by X-ray photoelectron spectroscopy (XPS).

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“…Significant improvements in high quality SiC wafer fabrication have made SiC-based power devices, including Schottky diodes, bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and junction field-effect transistors (JFETs), commercially available. In particular, the investigation of SiC insulated-gate bipolar transistors (IGBT) save been demonstrated by several researchers [5][6][7][8]. Benefiting from the high breakdown electric field (E bd ), which is approximately 10 times higher than that of Si-based devices, the SiCbased devices can easily operate in an ultrahigh-voltage region larger than 10 kV [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications

Zhang

et al. 2021

Micromachines

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SiC direct bonding using O2 plasma activation is investigated in this work. SiC substrate and n− SiC epitaxy growth layer are activated with an optimized duration of 60s and power of the oxygen ion beam source at 20 W. After O2 plasma activation, both the SiC substrate and n− SiC epitaxy growth layer present a sufficient hydrophilic surface for bonding. The two 4-inch wafers are prebonded at room temperature followed by an annealing process in an atmospheric N2 ambient for 3 h at 300 °C. The scanning results obtained by C-mode scanning acoustic microscopy (C-SAM) shows a high bonding uniformity. The bonding strength of 1473 mJ/m2 is achieved. The bonding mechanisms are investigated through interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). Oxygen is found between the two interfaces, which indicates Si–O and C–O are formed at the bonding interface. However, a C-rich area is also detected at the bonding interface, which reveals the formation of C-C bonds in the activated SiC surface layer. These results show the potential of low cost and efficient surface activation method for SiC direct bonding for ultrahigh-voltage devices applications.

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Demonstration of Lateral IGBTs in 4H-SiC

Cited by 17 publications

References 11 publications

Silicon carbide wafer bonding by modified surface activated bonding method

Silicon carbide wafer bonding by modified surface activated bonding method

Direct Wafer Bonding of SiC-SiC by SAB for Monolithic Integration of SiC MEMS and Electronics

Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications

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