Demonstration of magnetoelectric read head of multiferroic heterostructures

Abstract

Bilayered heterostructures of ferrites and BaTiO3, epitaxially grown on SrTiO3 single crystal substrate via pulsed laser deposition, showed an obvious magnetoelectric effect. Employing such simple bilayered thin films as a prototype magnetoelectric read head was demonstrated. The media field from the bits in a magnetic recording medium was modeled by an ac magnetic field. The output voltage waveforms of the bilayered thin films well followed the wave functions of the ac magnetic excitation signal, which illustrates utility of the bilayered heterostructures as magnetoelectric read head.

Electric-field induced strain modulation of magnetization in Fe-Ga/Pb(Mg1/3Nb2/3)-PbTiO3 magnetoelectric heterostructures

“…These data show the ability to reversibly and rapidly tune the magnetization M of Fe-Ga by applying an appropriate electric field. The results demonstrate the potential for application in magnetoelectric read heads in memory devices, 32 and also extend understanding towards modulation of magnetization.…”

“…In the present investigation, this tunable strain of PMN-PT was utilized to modulate the magnetization of Fe-Ga films. Furthermore, the in-plane piezoelectric coefficients d 31 and d 32 have different signs, consequently the anisotropy of the transverse strains e 1 and e 2 in h110i PMN-PT single crystal substrates could significantly contribute to large changes in the in-plane magnetic anisotropy of Fe-Ga films under external applied electric fields, as will be discussed in detail below.…”

Status and Perspectives of Multiferroic Magnetoelectric Composite Materials and Applications

“…anisotropic magneto-resistance (AMR), giant magneto-resistance (GMR) or tunneling magneto-resistance (TMR). The MR read head contains a sensing stack along with several additional layers and structures that ensures the proper biasing and shielding of the sensor [106,107]. During operation, the internal resistance of the MR sensor changes due to interaction with the stray fields from the recorded bits of a magnetic recording medium.…”

Interface-mediated ferroelectric patterning and Mn valency in nano-structured PbTiO3/La0.7Sr0.3MnO3

“…On the other hand, if it is carefully tailored and preengineered into the system, it can help to improve device switching speeds. 4 Importantly, for spintronics and memory applications, it can also be used to create patterned ferroelectric storage media 5 or even artificial multiferroics [6][7][8][9] when combined with magnetic materials.…”

“…7 We employed a multitechnique approach using piezo-force response microscopy and photoemission microscopy to investigate a self-organizing polarization domain pattern in PbTiO 3 /La 0.7 Sr 0.3 MnO 3 (PTO/LSMO) nanostructures. The polarization is correlated with the nanostructure morphology as well as with the thickness and Mn valence of the LSMO template layer.…”