Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

Abstract

The back cover shows a retardation image of c‐plane GaN substrate having dislocation density of 103 cm–2 taken with a birefringence microscope, as presented by Atsushi Tanaka and co‐workers in article number http://doi.wiley.com/10.1002/pssb.201900553. Strain around dislocations appears as contrast in the image. From this contrast, it can be determined to which direction the edge component of the dislocation is oriented. The table below shows the correspondence between the direction of extra half plane of edge component and the contrast. All six equivalent <112¯0> edge components are found in this image.