Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Dehzangi, Arash; Wu, Donghai; McClintock, Ryan P; Li, Jiakai; Jaud, Alexander; Razeghi, Manijeh

doi:10.3390/photonics7030068

Cited by 7 publications

(2 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A promising approach is to remove the mesa sidewalls entirely by using a planar architecture in IR PDs based on InAs/InAsSb T2SLs. Devices with a planar structure could exhibit various advantages, the foremost of which would be their potential to rule out surface leakage current completely by avoiding exposure of any surfaces to ambient circumstances [139][140][141]. Therefore, such a planar device enables the surface leakage to be impeded and realizes a small pixel size as well as large P/A ratios.…”

Section: Mesa-free Planar Structure Ir Pdsmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

show abstract

Section: Mesa-free Planar Structure Ir Pdsmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…As for the optoelectronic performance of InAs/InAsSb-based MWIR photodetectors, researchers at Northwestern University have optimized InAs/InAsSb-based MWIR photodetectors with an AlAsSb barrier in both planar and mesa configurations. These detectors demonstrated a dark current density of 0.44 A=cm 2 under −50 mV at 300 K and 2.5 × 10 −2 A=cm 2 at 150 K [15,16] . Jiang et al demonstrated an InAs/InAsSb-based photodetector with a cutoff wavelength of 3.5 μm, presenting a peak responsivity of 0.56 A/W under a reverse bias voltage of −130 mV [17] .…”

Section: Introductionmentioning

confidence: 99%

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Cao,

Wang,

Peng

et al. 2024

中国光学快报

View full text Add to dashboard Cite

In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO 2 layer. These result in ultralow dark current density of 6.28 × 10 −6 A=cm 2 and 0.31 A=cm 2 under −600 mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20 × 10 4 Ω • cm 2 and 1.32 Ω • cm 2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 μm and a peak detectivity of 2.1 × 10 9 cm • Hz 1=2 =W were obtained at a high operating temperature up to 237 K.

show abstract

A review on the role of nanotechnology in the development of near-infrared photodetectors: materials, performance metrics, and potential applications

Gundepudi,

Neelamraju,

Sangaraju

et al. 2023

J Mater Sci

View full text Add to dashboard Cite

Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Cited by 7 publications

References 33 publications

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

A review on the role of nanotechnology in the development of near-infrared photodetectors: materials, performance metrics, and potential applications

Contact Info

Product

Resources

About