Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

Zhao, J.H.; Alexandrov, Petre; Li, X.

doi:10.1109/led.2003.813370

Cited by 106 publications

(58 citation statements)

References 8 publications

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“…Recently, a 4H-SiC SBD with a breakdown voltage of 10.8kV was reported. A forward voltage drop of 3.15V was achieved at 20A/cm 2 , corresponding to a specific on-resistance of 97.5mQcm 2 [2]. Considering the current spreading, a specific on-resistance of 187mOcm 2 can be estimated.…”

Section: Sic Sbd Developmentmentioning

confidence: 99%

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Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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Section: Sic Sbd Developmentmentioning

confidence: 99%

“…Impressive progresses and developments have been made. Recently, SiC SBDs with breakdown voltage higher than lOkV has been reported [2]. SiC MPS diodes capable of 4.3kV were also reported [3].…”

Section: Introductionmentioning

confidence: 99%

Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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“…First of all there is the contribution due to the thermoionic mechanism that gives the current I therm , which can be obtained from the Equation 1, and shown in Equation 6.…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…Also, several interesting papers have been published on power DMOSFETs, [3] implanted VJFETs, [4] PiN diodes, [5] and Schottky diodes. [6] In all these devices, an epitaxial thickness around 80-100 lm is needed to obtain a breakdown voltage between 10 and 11 kV. To obtain this large thickness with a standard epitaxial growth rate of 6-8 lm h -1 it is necessary to use a process time of more than ten hours with a consequent high cost of the process.…”

Section: Introductionmentioning

confidence: 99%

4H SiC Epitaxial Growth with Chlorine Addition

Via

Galvagno

Fóti

et al. 2006

Chemical Vapor Deposition

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The growth rate of a 4H-SiC epitaxial layer has been increased by a factor of 19 (up to 112 lm h -1 ) with respect to the standard process, with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl has been characterized by electrical, optical, and structural characterization methods. The effects of various deposition parameters on the epitaxial growth process have been described, and an explanation of this behavior in terms of the diffusion coefficient on the surface, D s , and the ratio between the characteristic times, s D :s G , has been provided. The diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600°C, have electrical characteristics comparable with the standard epitaxial process. This process is very promising for high-power devices with a breakdown voltage of 10 kV.

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“…These new devices include: power DMOSFETs [2], implanted VJFETs [3], PiN diodes [4] and Schottky diodes [5]. To obtain a breakdown voltage between 10 and 11 kV an epitaxial layer thickness on the order of 80-100 mm is needed if the doping density is in the 10 14 /cm 3 range.…”

Section: Introductionmentioning

confidence: 99%