Demonstration of the g · b x u = 0 edge dislocation invisibility criterion for electron channelling contrast imaging

Crimp, M. A.; Simkin, B.A.; Ng, B. C.

doi:10.1080/09500830110088755

Cited by 58 publications

(39 citation statements)

References 11 publications

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“…While both the g b ¼ 0 (Morin et al, 1979;Czernuszka et al, 1990b;Simkin and Crimp, 1999) and the g b 3 u ¼ 0 (Crimp et al, 2001) invisibility criteria have been demonstrated for ECCI, in practice, significant care must be taken when interpreting such contract analysis. TEM allows reasonable images of dislocations to be obtained for a significant range of positive deviations from the Bragg condition (Hirsch et al, 1965).…”

Section: Ecci Contrast Analysis and Limitationsmentioning

confidence: 98%

Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast

Crimp¹

2006

Microscopy Res & Technique

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The imaging and characterization of dislocations is commonly carried out by thin foil transmission electron microscopy (TEM) using diffraction contrast imaging. However, the thin foil approach is limited by difficult sample preparation, thin foil artifacts, relatively small viewable areas, and constraints on carrying out in situ studies. Electron channeling imaging of electron channeling contrast imaging (ECCI) offers an alternative approach for imaging crystalline defects, including dislocations. Because ECCI is carried out with field emission gun scanning electron microscope (FEG-SEM) using bulk specimens, many of the limitations of TEM thin foil analysis are overcome. This paper outlines the development of electron channeling patterns and channeling imaging to the current state of the art. The experimental parameters and set up necessary to carry out routine channeling imaging are reviewed. A number of examples that illustrate some of the advantages of ECCI over thin foil TEM are presented along with a discussion of some of the limitations on carrying out channeling contrast analysis of defect structures.

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Section: Ecci Contrast Analysis and Limitationsmentioning

confidence: 98%

Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast

Crimp¹

2006

Microscopy Res & Technique

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“…While many of these studies implement ECCI to observe dislocations, only one study on FeAl single crystals has demonstrated an invisibility criterion via channeling contrast to characterize individual dislocations. 13 This capacity could uniquely be applied to correlate defect behavior for both substrates and overlying epitaxial films since ECCI could be conducted pre and post growth.…”

Section: Introductionmentioning

confidence: 99%

Imaging Dislocations in Single-Crystal SrTiO3 Substrates by Electron Channeling

Kamaladasa

Jiang

Picard

2011

Journal of Elec Materi

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Electron channeling contrast imaging (ECCI) using a conventional polemounted backscatter detector in a commercial scanning electron microscope (SEM) has been implemented to analyze extended defects. In-grown extended defects in bulk SrTiO 3 (001) substrates such as dislocation loops, subsurface dislocations parallel to the surface, and surface-penetrating dislocations have been distinguished by ECCI. The techniques of dislocation-selective etching and ECCI have been compared side-by-side, where surface-penetrating dislocations have been shown to have one-to-one correspondence with ECCI spot features. gAEb and gAEb 9 u have been implemented for subsurface portions of intrinsic dislocations, being identified as screw dislocations with Burgers vector in the h100i direction.

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“…Up to now, defined diffraction conditions based on ECP [14,22,43,44] or SACP [45,46] were necessary for the investigation of individual dislocations by ECCI. However, these methods are limited by necessary large grain sizes (ECP) or instrumental conditions (SACP) [50] is used to calculate diffraction patterns of studied ECCI areas.…”

Section: Combination Of Ecci With Other Sem Techniquesmentioning

confidence: 99%

Case studies on the application of high-resolution electron channelling contrast imaging – investigation of defects and defect arrangements in metallic materials

Weidner

Biermann

2015

Philosophical Magazine

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In 1967, Coates discovered the electron channelling contrast of backscattered electrons (BSEs) in scanning electron microscopy, and by this the possibility to investigate arrangements of lattice defects in deformed microstructures of materials. Since that time, a straightforward development of the scanning electron microscopes as well as of the electron channelling contrast technique took place. Nowadays, the performance of scanning electron microscopes is high enough that the resolution of electron channelling contrast imaging (ECCI) micrographs is comparable with conventional bright field transmission electron microscopy (TEM) micrographs. In the first part of the present paper, a historical review on the development of the ECCI technique starting from its discovery more than 45 years ago up to the combination with other advanced methods of scanning electron microscopy like electron backscatter diffraction or high-resolution selected area channelling patterning in the last few years is given. Major important investigations using this technique for the visualization of individual lattice defects like stacking faults (SFs) and dislocations or dislocation arrangements are chronologically summarized. The second part demonstrates that nowadays, ECCI micrographs taken in high-resolution scanning electron microscopes can be called high-resolution ECCI (HR-ECCI). It is shown that the resolution of individual SFs and dislocations in the HR-ECCI micrographs is comparable to that of conventional TEM (about 15 nm defect image width). Furthermore, the paper is demonstrating that HR-ECCI micrographs can be obtained for various types of materials after different mechanical loadings and different grain sizes ranging from large grain size of 500 μm (cast steel) down to less than 2 μm (γ-TiAl).

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Demonstration of the g · b x u = 0 edge dislocation invisibility criterion for electron channelling contrast imaging

Cited by 58 publications

References 11 publications

Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast

Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast

Imaging Dislocations in Single-Crystal SrTiO3 Substrates by Electron Channeling

Case studies on the application of high-resolution electron channelling contrast imaging – investigation of defects and defect arrangements in metallic materials

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