Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature

Gawron, W.; Kubiszyn, Łukasz; Michalczewski, Krystian; Piotrowski, J.; Martyniuk, Piotr

doi:10.1109/led.2022.3188909

Cited by 8 publications

(5 citation statements)

References 26 publications

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“…presents the spectral characteristics comparison of MCT and T2SL detectors for the LWIR range at 210 K and 230 K. The MCT detector is a multiple LWIR detector presented in section 5. The LWIR SLs inter-band quantum cascade photodetector (ICIP) that achieved D* of about 2.7 × 10 8 cmHz 1/2 W −1 at 230 K fully confirms its HOT capabilities as demonstrated by Gawron et al[15]. Those comparisons are not entirely authoritative because it is hard to find two detectors of two different technologies with exactly the same shapes of spectral characteristics.…”

supporting

confidence: 70%

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

2024

Opto-Electronics Review

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and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 µm to 14 µm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.

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supporting

confidence: 70%

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

2024

Opto-Electronics Review

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“…The matched-absorbers ICIP reaches ~ 10 8 cmHz 1/2 /W for 8 m being two times higher than for PVM HgCdTe operating at 300 K [24]. The 10 m device (with and without immersion lens) was reported by Gawron et al previously [19,20]. Comparing T2SLs InAs/InAsSb based detector with 10.6 m PVM HgCdTe reaching ~ 1.3×10 7 cmHz 1/2 /W, the developed device reaches ~ 2.5×10 7 cmHz 1/2 /W while not immersed and ~ 2.5×10 8 cmHz 1/2 /W when immersed.…”

Section: Multi-junction Detector Architecturementioning

confidence: 93%

“…Razeghi and Piotrowski in 1995 introduced stacked interband cascade detectors based on A III B V -Ga-free bulk InAsSb alloys [5]. Yang et al and other research groups have developed vertical interband cascade detectors based on InAs/GaSb and InAs/InAsSb T2SLs for SWIR, MWIR and LWIR ranges [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. Those devices enable photovoltaic operation up to 420 K in the MWIR and 380 K in LWIR ranges.…”

Section: Introductionmentioning

confidence: 99%

Current state of the art and the future prospect of the interband cascade photodetectors

Kubiszyn¹,

Michalczewski

Gawron

et al. 2023

Infrared Technology and Applications XLIX

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The requirement for cooling below room temperature to limit thermal generation processes is the major drawback of infrared (IR) photon detectors. In order to obtain background limited performance (BLIP), the devices for the 3-5 m spectral region are typically operating at T<200 K, while those for the 8-12 m at 77 K. The current effort to produce near room temperature photon detectors (higher operating temperature conditions, HOT) are being concentrated on the interband cascade photodetectors (ICIP). That effort is mostly seen for longwave infrared (LWIR) devices operating at HOT conditions where the optimum absorber may be thicker compared to the carriers' diffusion length, limiting the photogenerated carriers collection what leads to the decreasing of the quantum efficiency (QE) and the ultimate performance cannot be achieved in practice. The ICIP architecture allows to circumvent that issue. In addition to avoid the limitation imposed by the reduced diffusion length, the intersubband (IS) quantum cascade photodetectors (QCPs) were introduced in the early 2000s based on quantum-well infrared photodetectors (QWIPs) and quantum cascade lasers (QCLs). Those cascade detectors proved to be operating at low temperatures ~ 100 K. In this paper we present the current status of the ICIPs based on type-II superlattices (T2SLs) InAs/InAsSb n-and p-type doped active layers intended to be operating within LWIR range and HOT conditions -210 K reached by thermoelectric coolers and room temperature. Immersed detector reached detectivity, D * ~2.5×10 8 cmHz 1/2 /W at 300 K and wavelength, =10 m.

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“…Also, monolithically integrated mid-IR ICL and ICIP with a record-high detectivity (~2×10 10 Jones) was demonstrated operating at room temperature [30], paving the way for important applications such as on-chip miniaturized sensors, spectrometers, optical communication and processing. Recently, preliminary ICIPs with Ga-free InAs/InAsSb SL absorbers were reported to explore the longer carrier lifetime [44][45].…”

Section: Structure and Operation Principle Of Icipmentioning

confidence: 99%

Signal, noises, and detectivities in multi-stage infrared photodetectors

Yang

2023

Quantum Sensing and Nano Electronics and Photonics XIX

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Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature

Cited by 8 publications

References 26 publications

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

Current state of the art and the future prospect of the interband cascade photodetectors

Signal, noises, and detectivities in multi-stage infrared photodetectors

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