Abstract:Static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported. The 2.4 mm² SiC BJT show good static and switching behavior. The current gain is low compared to literature, but several issues have been identified and can be improved. For the first time, the Short-circuit ruggedness of a 10 kV SiC-BJT is reported. These tests show outstanding performance with at least 16 µs withstand time. Several samples have been brought to failure and… Show more
“…Depending on the material/s employed, heterostructures transistors enable performances and characteristics that are unknown to classical all-in-silicon CMOS-like technologies. Among the most relevant, it is worth mentioning increased power handling [212] and higher electrons mobility, the latter making such devices suitable to work in high-frequency ranges, like mm-Waves and above [213], [214].…”
This paper is published thanks to the support of the project "Wafer Level Micropackaging di RF MEMS switch per applicazioni spaziali", funded by the Agenzia Spaziale Italiana (ASI) (Grant F36C18000400005).
“…Depending on the material/s employed, heterostructures transistors enable performances and characteristics that are unknown to classical all-in-silicon CMOS-like technologies. Among the most relevant, it is worth mentioning increased power handling [212] and higher electrons mobility, the latter making such devices suitable to work in high-frequency ranges, like mm-Waves and above [213], [214].…”
This paper is published thanks to the support of the project "Wafer Level Micropackaging di RF MEMS switch per applicazioni spaziali", funded by the Agenzia Spaziale Italiana (ASI) (Grant F36C18000400005).
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