Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block

Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs

“…Hence, we fabricated a 1.2 kV SWITCH-MOS with Ni to investigate its surge current capabilities and the effect of the higher barrier height of the Schottky metal on surge current capabilities. 27) We found that although the SWITCH-MOS with Ni showed higher surge current capability than with Ti, the capability was still close to that of IE-UMOSFETs.…”

“…To further enhance heat removal from chip surfaces, Cu blocks with wider areas and bigger die-sized IE-UMOSFETs were designed and fabricated compared to the previous study. 25) The die size was 4.0 × 6.4 mm 2 , and the cell pitch was 5 μm in IE-UMOSFETs with a thick n+ substrate of 350 μm. Photographs of the top view and assembled Type III IE-UMOSFET are shown in Figs.…”

“…The 2.9 × 4.1 mm 2 Cu surface covers roughly 64% of the active area of the chip, which is 84% larger than the devices used in the previous study. 25) In this study, the rated current density of each type of SWITCH-MOS and IE-UMOSFETs was set at J = 425 A cm −2 , which is roughly 2.4 times higher than the latest commercial 1.2 kV silicon IGBTs. 28) So the rated currents of these devices were 25 A (3.0 × 3.0 mm 2 die) and 75 A (4.0 × 6.4 mm 2 die), respectively.…”

“…24) Our previous study compared the surge current capabilities of embedded SBDs using Ti in SWITCH-MOSs with body-PiN-diodes in the standard SiC trench MOSFETs of IE-UMOSFETs. 25) The IE-UMOSFET is a SiC trench MOSFET with low resistance. IE stands for implantation and epitaxial growth and the processes involved in the p-base formation.…”

Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs

“…Some studies have demonstrated the surge current capabilities of body-PiN-diodes and built-in SBDs in SiC MOSFETs and their associated failure mechanisms. [16][17][18][19][20][21][22][23] The primary failure mechanism has been found to be heat generations from forward voltage drops with huge surge currents, which can cause to the source metal to melt and/or brake the silicon oxide layers. However, only a few papers have reported the surge current capabilities of SBDs embedded in SiC MOSFETs to the best of our knowledge.…”