Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

Whiteside, Matthew; Arulkumaran, Sabaratnam; Ng, Geok Ing

doi:10.1016/j.mseb.2021.115224

Cited by 17 publications

(5 citation statements)

References 40 publications

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“…This showed that h-BN has a broad prospect in the preparation of high-performance diodes. Matthew Whiteside et al [66] prepared vertically-ordered (VO) h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mo- In recent years, 2D transition-metal dichalcogenides (TMDs) with high transparency and thin atomic layer structures [58,59] have been widely used in nanoelectronics and optoelectronics [60][61][62]. Among typical diodes, semiconductor-insulator-semiconductor (SIS) diodes have considerable advantages over traditional p-n junction diodes.…”

Section: H-bn/iii-v Ledmentioning

confidence: 99%

“…This showed that h-BN has a broad prospect in the preparation of high-performance diodes. Matthew Whiteside et al [66] prepared vertically-ordered (VO) h-BN/AlGaN/GaN metal-insulator-semiconductor high-electronmobility transistors on a Si substrate. In comparison to a conventional Schottky diode, the VO h-BN diode exhibited about two orders of magnitude lower gate leakage current at −20 V and two orders of magnitude lower forward current at +2 V (Figure 10f).…”

Section: H-bn/iii-v Ledmentioning

confidence: 99%

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Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications

et al. 2022

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Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III–V compounds are systematically summarized, and the prospects are discussed.

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Section: H-bn/iii-v Ledmentioning

confidence: 99%

“…This showed that h-BN has a broad prospect in the preparation of high-performance diodes. Matthew Whiteside et al [66] prepared vertically-ordered (VO) h-BN/AlGaN/GaN metal-insulator-semiconductor high-electronmobility transistors on a Si substrate. In comparison to a conventional Schottky diode, the VO h-BN diode exhibited about two orders of magnitude lower gate leakage current at −20 V and two orders of magnitude lower forward current at +2 V (Figure 10f).…”

Section: H-bn/iii-v Ledmentioning

confidence: 99%

Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications

et al. 2022

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“…Some researchers tried to prepare h-BN thin films on AlGaN/GaN HEMTs directly using microwave plasma enhanced chemical vapor deposition (MWPECVD), and found that the caxis of h-BN is preferentially oriented perpendicular to the surface of the sample [9]. To take advantage of the superior in-plane properties of h-BN, such as high heat dissipation and electron mobility, vertically ordered (VO) h-BN prepared with high-power impulse magnetron sputtering deposited on GaN-based HEMTs was studied by one research group [14]. However, these equipment systems are complex and expensive.…”

Section: Introductionmentioning

confidence: 99%

Direct Synthesis of Vertical Self-Assembly Oriented Hexagonal Boron Nitride on Gallium Nitride and Ultrahigh Photoresponse Ultraviolet Photodetectors

et al. 2023

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The applications of three-dimensional materials combined with two-dimensional materials are attractive for constructing high-performance electronic and photoelectronic devices because of their remarkable electronic and optical properties. However, traditional preparation methods usually involve mechanical transfer, which has a complicated process and cannot avoid contamination. In this work, chemical vapor deposition was proposed to vertically synthesize self-assembly oriented hexagonal boron nitride on gallium nitride directly. The material composition, crystalline quality and orientation were investigated using multiple characterization methods. Thermal conductivity was found to be enhanced twofold in the h-BN incorporated sample by using the optothermal Raman technique. A vertical-ordered (VO)h-BN/GaN heterojunction photodetector was produced based on the synthesis. The photodetector exhibited a high ultraviolet photoresponsivity of up to 1970.7 mA/W, and detectivity up to 2.6 × 1013 Jones, and was stable in harsh high temperature conditions. Our work provides a new synthesis method to prepare h-BN on GaN-based materials directly, and a novel vertically oriented structure of VO-h-BN/GaN heterojunction, which has great application potential in optoelectronic devices.

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“…In addition, the problem of high gate current leakage at scaled dimensions and a consequent drain current collapse, reduces its performance. As a solution to these issues, the metal-insulatorsemiconductor high electron mobility transistor (MISHEMT) is presented as an alternative [9][10][11]. With the gate insulator, the gate leakage reduces drastically and mitigates the current collapse [10,12,13].…”

Section: Introductionmentioning

confidence: 99%

“…With the gate insulator, the gate leakage reduces drastically and mitigates the current collapse [10,12,13]. The MISHEMT is a promising alternative for applications at high frequency, including 5G applications [14][15][16], power electronics [11,17], showing high power gain at 10 GHz [18], with the possibility of achieving higher RF performance of the device by adjusting the Al concentration in the AlGaN barrier [19].…”

Section: Introductionmentioning

confidence: 99%

MISHEMT intrinsic voltage gain under multiple channel output characteristics

Canales,

Perina,

Martino

et al. 2023

Semicond. Sci. Technol.

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In this paper the MISHEMT device (Metal/Si3N4/AlGaN/AlN/GaN - Metal-Insulator-Semiconductor High Electron Mobility Transistor) is studied focusing mainly on the impact of the multiple conductions on the intrinsic voltage gain (Av). It is shown that the total drain current is composed of 3 different drain current components, whereof one is related to theMIS channel and the other two are related to HEMT channels. The device output characteristics present double drain voltage saturation that gives rise to a double plateau in the saturation region of the output characteristics. This behavior relies also on the gate voltage, so the output characteristics and analog parameters extraction are bias dependent. The intrinsic voltage gain increases thanks to the Early voltage increment in the second plateau whereHEMT conduction is dominant. Electron concentration profiles were simulated in order to investigate the device saturation regime.investigate the device saturation regime.

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Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

Cited by 17 publications

References 40 publications

Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications

Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications

Direct Synthesis of Vertical Self-Assembly Oriented Hexagonal Boron Nitride on Gallium Nitride and Ultrahigh Photoresponse Ultraviolet Photodetectors

MISHEMT intrinsic voltage gain under multiple channel output characteristics

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