Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities

Large-Sized Nanocrystalline Ultrathin β-Ga2O3 Membranes Fabricated by Surface Charge Lithography

“…High resolution (HR) micrographs of the membranes treated at three temperatures (Figure 5c,f,h) show a well textured surface; however, with an increase in temperature a partial evaporation and material consumption necessary for recrystallization occurs. After 500 • C treatment (Figure 5d,e), ED indicates the formation of an α-Ga 2 O 3 R-3c structure oriented along the [1] axis. Additional reflections can be attributed to [1] wurtzite GaN and [111] γ-Ga 2 O 3 Fd-3m, which coincide in the given zone axis orientations for first and third order of reflections.…”

“…After 500 • C treatment (Figure 5d,e), ED indicates the formation of an α-Ga 2 O 3 R-3c structure oriented along the [1] axis. Additional reflections can be attributed to [1] wurtzite GaN and [111] γ-Ga 2 O 3 Fd-3m, which coincide in the given zone axis orientations for first and third order of reflections. As XPS results demonstrate the presence of both nitrogen and oxygen species, one can conclude the formation of oxide occurs simultaneously with retention of GaN.…”

“…Gallium-oxide is a wide bandgap semiconductor material (4.9 eV at 300 K) attracting the interest of researchers owing to its large Baliga's figure of merit (BFOM) [1], high breakdown electric field, and high temperature operation etc. These characteristics render it a perfect candidate for applications in high-performance power electronics [2,3], where devices constructed from Ga 2 O 3 bear the advantage of low power losses during high frequency switching in the GHz regime [4].…”

Superior high temperature performance of 8 kV NiO/Ga2O3vertical heterojunction rectifiers

“…The forward current transport mechanism in such junctions is typically recombination at low biases and trap-assisted tunneling at higher bias. 10,21–26 Promising rectifier performance has been reported with this approach, 14–36 including V B of 8.32 kV, with figure of merit 13.2 GW cm −2 . 15…”

N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium

“…Devices with power densities reaching as high as 1 GW/cm 2 14 and breakdown voltages up to 8 kV 8 were already realized. In addition to unipolar devices, rapid progress has been made in studying β-(AlxGa1-x)2O3/β-Ga2O3 heterostructures [15][16][17][18] and integration of p-type materials with β-Ga2O3 19 .…”