Demonstrations of high voltage SiC materials, devices and applications in the solid state transformer

Yang, Fei; Tang, Xingfu; Wei, Xiaoguang; Sang, Ling; Liu, Rui; Bai, Song; Peng, Tianhuan; Zhao, Guoliang; Yang, Ping; Yang, Tongtong; Tang, Guangfu

doi:10.1016/j.jcrysgro.2022.127059

Cited by 9 publications

(6 citation statements)

References 16 publications

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“…The atomic angle errors of Si-C-Si and C-Si-C are about −0.2439% and 0.0759%, respectively. 109.417 (C-Si-C) 0.0759 1 The temperature is 300 K. 2 ± indicates that the value in this paper is greater or less than the experimental value.…”

Section: Validation Of the Modelmentioning

confidence: 71%

“…The duration of cascade collisions becomes longer with increasing temperature. Figure 5b shows that the fitted curve between the peak of the Frenkel pair and the temperature satisfies a linear relationship, which can be expressed by Equation (2). The reason is that the transition from low to high temperatures enhances the thermal motion of the atoms.…”

Section: Effect Of Temperature On 6h-sic Cascade Collisionsmentioning

confidence: 87%

“…3C-SiC is mainly used in photovoltaic applications [1]. 4H-SiC materials are mainly used to fabricate high-frequency and high-power devices [2]. 6H-SiC materials are mainly used for the manufacture of photoconductive detectors [3].…”

Section: Introductionmentioning

confidence: 99%

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Influence of Temperature and Incidence Angle on the Irradiation Cascade Effect of 6H-SiC: Molecular Dynamics Simulations

Chen,

Liu,

Yan

et al. 2023

Micromachines

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SiC devices have been typically subjected to extreme environments and complex stresses during operation, such as intense radiation and large diurnal amplitude differences on the lunar surface. Radiation displacement damage may lead to degradation or failure of the performance of semiconductor devices. In this paper, the effects of temperature and incidence angle on the irradiation cascade effect of 6H-SiC were investigated separately using the principles of molecular dynamics. Temperatures were set to 100 K, 150 K, 200 K, 250 K, 300 K, 350 K, 400 K and 450 K. The incidence direction was parallel to the specified crystal plane, with angles of 8°, 15°, 30°, 45°, 60° and 75° to the negative direction of the Z-axis. In this paper, the six types of defects were counted, and the microscopic distribution images and trajectories of each type of defect were extracted. The results show a linear relationship between the peak of the Frenkel pair and temperature. The recombination rate of Frenkel pairs depends on the local temperature and degree of aggregation at the center of the cascade collision. Increasing the angle of incidence first inhibits and then promotes the production of total defects and Frenkel pairs. The lowest number of total defects, Frenkel pairs and antisite defects are produced at a 45° incident angle. At an incidence angle of 75°, larger size hollow clusters and anti-clusters are more likely to appear in the 6H-SiC.

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Section: Validation Of the Modelmentioning

confidence: 71%

Section: Effect Of Temperature On 6h-sic Cascade Collisionsmentioning

confidence: 87%

See 1 more Smart Citation

Influence of Temperature and Incidence Angle on the Irradiation Cascade Effect of 6H-SiC: Molecular Dynamics Simulations

Chen,

Liu,

Yan

et al. 2023

Micromachines

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“…In terms of silicon carbide crystalline materials, 3C-SiC materials are mainly used in photovoltaic applications, such as solar cells [ 1 , 2 ]. Indeed, 4H-SiC and 6H-SiC are most widely used in the semiconductor field, where 4H-SiC is mainly used for the preparation of high-frequency, high-temperature, and high-power devices [ 3 , 4 , 5 ]. In contrast, 6H-SiC materials are mainly used for the production of power devices in the field of optoelectronics, such as photoconductive detectors or substrate materials for LED devices [ 6 , 7 ].…”

Section: Introductionmentioning

confidence: 99%

Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles

et al. 2023

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When semiconductor materials are exposed to radiation fields, cascade collision effects may form between the radiation particles in the radiation field and the lattice atoms in the target material, creating irradiation defects that can lead to degradation or failure of the performance of the device. In fact, 6H-SiC is one of the typical materials for third-generation broadband semiconductors and has been widely used in many areas of intense radiation, such as deep space exploration. In this paper, the irradiation cascade effect between irradiated particles of different energies in the radiation and lattice atoms in 6H-SiC target materials is simulated based on the molecular dynamics analysis method, and images of the microscopic trajectory evolution of PKA and SKA are obtained. The recombination rates of the Frenkel pairs were calculated at PKA energies of 1 keV, 2 keV, 5 keV, and 10 keV. The relationship between the number of defects, the spatial distribution pattern of defects, and the clustering of defects in the irradiation cascade effect of 6H-SiC materials with time and the energy of PKA are investigated. The results show that the clusters are dominated by vacant clusters and are mainly distributed near the trajectories of the SKA. The number and size of vacant clusters, the number of Frenkel pairs, and the intensity of cascade collisions of SKAs are positively correlated with the magnitude of the energy of the PKA. The recombination rate of Frenkel pairs is negatively correlated with the magnitude of the energy of PKA.

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“…Silicon carbide (SiC) possesses excellent electrical properties and corrosion resistance, thereby holding significant industrial value. SiC is often employed as a cladding material in nuclear reactors [ 1 , 2 , 3 , 4 ] and widely used in the semiconductor field [ 5 , 6 , 7 ]. In nature, SiC exists in various crystal structures, including cubic zinc blende (3C) and hexagonal wurtzite (2H, 4H, and 6H).…”

Section: Introductionmentioning

confidence: 99%

Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide

Yu,

Dai,

et al. 2023

Materials

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Interatomic potentials play a crucial role in the molecular dynamics (MD) simulation of silicon carbide (SiC). However, the ability of interatomic potentials to accurately describe certain physical properties of SiC has yet to be confirmed, particularly for hexagonal SiC. In this study, the mechanical, thermal, and defect properties of four SiC structures (3C-, 2H-, 4H-, and 6H-SiC) have been calculated with multiple interatomic potentials using the MD method, and then compared with the results obtained from density functional theory and experiments to assess the descriptive capabilities of these interatomic potentials. The results indicate that the T05 potential is suitable for describing the elastic constant and modulus of SiC. Thermal calculations show that the Vashishta, environment-dependent interatomic potential (EDIP), and modified embedded atom method (MEAM) potentials effectively describe the vibrational properties of SiC, and the T90 potential provides a better description of the thermal conductivity of SiC. The EDIP potential has a significant advantage in describing point defect formation energy in hexagonal SiC, and the GW potential is suitable for describing vacancy migration in hexagonal SiC. Furthermore, the T90 and T94 potentials can effectively predict the surface energies of the three low-index surfaces of 3C-SiC, and the Vashishta potential exhibits excellent capabilities in describing stacking fault properties in SiC. This work will be helpful for selecting a potential for SiC simulations.

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Demonstrations of high voltage SiC materials, devices and applications in the solid state transformer

Cited by 9 publications

References 16 publications

Influence of Temperature and Incidence Angle on the Irradiation Cascade Effect of 6H-SiC: Molecular Dynamics Simulations

Influence of Temperature and Incidence Angle on the Irradiation Cascade Effect of 6H-SiC: Molecular Dynamics Simulations

Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles

Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide

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