Dense ferroelectric-ferroelastic domain structures in rhombohedral PMN-28PT single crystals

Ушаков, А. Д.; Турыгин, А. П.; Ахматханов, А. Р.; Аликин, Д. О.; Hu, Q.; Liu, X.; Zhao, Ye; Wang, Chao; Wei, Xiaoyong; Shur, V. Ya.

doi:10.1063/5.0008522

Cited by 5 publications

(2 citation statements)

References 32 publications

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“…The studied 72PMN-28PT single crystals were grown in Xi’an Jiaotong University, China, using the modified Bridgman technique. The details of sintering can be found elsewhere [ 26 ]. Crystalline plates, with thicknesses of 0.5 mm and 1 mm, were cut perpendicular to [111] from the boule.…”

Section: Methodsmentioning

confidence: 99%

“…In piezoelectric ceramics, the domination of ferroelectric or ferroelastic switching events in the total switching, i.e., 180-degree and non-180-degree polarization reversal, is still under discussion yet [ 20 , 21 ]. In situ optical and electron microscopy visualizations conclusively approved that 180-degree polarization reversal in the single crystals and thin films of ferroelectrics from c + -domain with upward-directed polarization to the c – -domain with downward-directed polarization predominantly occurs through the intermediate state of ferroelastic domain wall formation (growth of the a- domain), i.e., two 90-degree switching events in [001] cut tetragonal ferroelectrics [ 21 , 22 , 23 , 24 ], or subsequent 71°, 109°, and 180° switching events in [111] cut rhombohedral ferroelectrics [ 25 , 26 , 27 ]. Landau–Ginzburg–Devonshire calculations explain such behavior as an existence of the local energetical minimum between upward and downward-directed polarization states, associated with the formation of a- domains [ 28 , 29 , 30 ].…”

Section: Introductionmentioning

confidence: 99%

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Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals

et al. 2022

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The possibility to control the charge, type, and density of domain walls allows properties of ferroelectric materials to be selectively enhanced or reduced. In ferroelectric–ferroelastic materials, two types of domain walls are possible: pure ferroelectric and ferroelastic–ferroelectric. In this paper, we demonstrated a strategy to control the selective ferroelectric or ferroelastic domain wall formation in the (111) single-domain rhombohedral PMN-PT single crystals at the nanoscale by varying the relative humidity level in a scanning probe microscopy chamber. The solution of the corresponding coupled electro-mechanical boundary problem allows explaining observed competition between ferroelastic and ferroelectric domain growth. The reduction in the ferroelastic domain density during local switching at elevated humidity has been attributed to changes in the electric field spatial distribution and screening effectiveness. The established mechanism is important because it reveals a kinetic nature of the final domain patterns in multiaxial materials and thus provides a general pathway to create desirable domain structure in ferroelectric materials for applications in piezoelectric and optical devices.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals

et al. 2022

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Domain structure evolution during alternating current poling and its influence on the piezoelectric properties in [001]-cut rhombohedral PIN-PMN-PT single crystals

Ушаков

Liu

et al. 2021

Applied Physics Letters

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Extensively studied PMN-PT and PIN-PMN-PT crystals with compositions close to the morphotropic phase boundary possess excellent piezoelectric characteristics. Recently developed alternating current treatment enhances the piezoelectric performance even further. Here, we demonstrate the results of studying the domain structure evolution by direct optical imaging during polarization reversal in [001]-oriented PIN-PMN-PT single crystals of rhombohedral phase during alternating current poling (ACP). The main types of domain structures involved in polarization reversal were revealed. Cross-like domain structure (CDS) was found to be undesirable for the piezoelectric application. The ACP-treatment proved to be effective in reducing the CDS fraction as a result of the growth of lens-shaped domains attributed to the 71° switching. The interaction of cross-like and lens-shaped domains was proposed as a key mechanism for improving the piezoelectric properties by the ACP-treatment. Comparison of the switching current with optical images revealed the correlation between the CDS area and electric field corresponding to the current maximum. This fact allows optimizing the number of the ACP-treatment pulses based on the switching current data without optical imaging.

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Domain structure evolution during polarization reversal in calcium orthovanadate single crystals

Шишкина

Chuvakova

Yuzhakov

et al. 2022

Journal of Applied Physics

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We have switched polarization in calcium orthovanadate single crystal with as-grown domain structure consisting of isolated domains with charged domain walls (CDWs) located in the bulk using pretreatment by ac field and subsequent switching in dc field at the elevated temperature. The formation of the domain ledges at the CDW in the bulk and their growth in the polar direction has been revealed. The isolated domains with optically well-defined walls appeared when the ledge tops reached the surface, their shape and sizes remaining constant during further switching. Unlike usual continuous domain wall motion, we have observed the discrete switching by arising of the isolated domains without any input of the traditional domain nucleation at the polar surface. The obtained results have been explained under the assumption that at the used experimental conditions, the applied field is above the threshold value for ledge nucleation at CDW in the bulk, but below the threshold for domain wall motion at the surface. Thus, we have obtained the discrete switching by ledge growth without any sideways motion of the domain walls and domain coalescence. The nonuniform evolution of the domain structure at the surface is due to the dependence of the switching rate on the distance from CDW to the polar surface, which is random in the studied domain structure.

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Dense ferroelectric-ferroelastic domain structures in rhombohedral PMN-28PT single crystals

Cited by 5 publications

References 32 publications

Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals

Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals

Domain structure evolution during alternating current poling and its influence on the piezoelectric properties in [001]-cut rhombohedral PIN-PMN-PT single crystals

Domain structure evolution during polarization reversal in calcium orthovanadate single crystals

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