Densification and Sintering Kinetics in Sintered Silicon Nitride

Suttor, D.; Fischman, Gary S.

doi:10.1111/j.1151-2916.1992.tb05538.x

Cited by 56 publications

(31 citation statements)

References 21 publications

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“…For example, the lowest eutectic temperature of yttria-alumina-silica was reported as 1618 K [12] while that of yttria-silica is 1933 K [13]. Therefore, only a small amount of alumina needs to be added to significantly improve the density of silicon nitride sintered with yttria, as reported by Smith and Quackenbush [14].…”

Section: Introductionmentioning

confidence: 85%

Microstructure and mechanical properties of silicon nitride with tape cast tri-layer structures

et al. 2003

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Four kinds of silicon nitride samples with tri-laminate structures were prepared by stacking tapes with aligned β-Si3N4 whisker seeds. Three-point flexural strengths of the samples were measured at both room temperature and 1673 K. As the total thickness of the layers with the whisker seeds aligned parallel to tension was increased, the flexural strength was increased at both room temperature and at 1673 K. The flexural strength at 1673 K was more sensitive to orientations of the grains in the surface layer than that at room temperature. Observation of the fracture surface revealed that the grains growing from the neighboring whisker seeds were often broken such that they formed a single one grain. Extensive brittle fracture of the grains without much grain pullout occurred even at 1673 K for the samples.

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Section: Introductionmentioning

confidence: 85%

Microstructure and mechanical properties of silicon nitride with tape cast tri-layer structures

et al. 2003

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“…The grain structure and constitution of an insulating composite are greatly determined by dynamic parameters of temperature treatment-billet heating modes and sinter cooling modes. The former governs the chemistry and kinetics of interaction between the phase components and compaction environment [2], while the latter influences the dynamics of crystallization in a material. It is believed that a substance is easily decrystallized if the critical cooling rate is no more than 60 deg/min [3].…”

Section: Introductionmentioning

confidence: 99%

“…11) Distribution of activation energies of low-temperature E 1 (1) and high-temperature E 2(2) conductivity areas of the composites with TiO 2 additive…”

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confidence: 99%

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Microstructure and conductivity of hot-pressed Si3N4–TiO2 (TiH2) composites cooled at different rates

Chernyakova

Zdolnik

Petrovskii

2010

Powder Metall Met Ceram

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UDC 621.762It is established that the cooling rate after hot pressing controls the crystallization and decrystallization in Si 3 N 4 -TiO 2 (TiH 2 ) composites. The critical cooling rate is 30 deg/min for Si 3 N 4 -TiO 2 composites and 50 deg/min for Si 3 N 4 -TiH 2 composites. It is shown that conductivity responds to the microstructural evolution of the composites as defect centers appear. The defects are located at trapping levels of (0.4 ± 0.05)-(1.3 ± 0.05) eV and differ in mutually perpendicular directions. The best combination of properties is shown by the composites with a monotrapping level with an activation energy of 0.8 ± 0.05 eV. These energy levels supposedly belong to the thin layer of amorphous silicon. The nascent defects are probably point defects or an association of point defects because of the low sensitivity of mechanical properties and strong response of conductivity to the cooling rate.

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“…Time can be precisely determined and controlled, whereas temperature irreversible α →ß phase transformation simultaneously occurred during this heat-treatment cycle [44]. The microstructure of the material evolved from equiaxed primary α-phase particles and ~50% open porosity to interlocking needle-like ß-phase grains and <5% closed porosity [45,46]. Components were fired in nitrogen in a batch furnace with a slight N 2 overpressure (+ 13.7 kPa), or in a continuous furnace at ambient pressure under flowing N 2 (Centorr Vacuum Industries, Nashua, NH, USA), or in a hot-isostatic press (HIP) (QIH-21 Avure Technologies Columbus, OH) at pressures ranging from about 0.7 MPa, to 10 MPa.…”

Section: Process Validation Studiesmentioning

confidence: 99%