2006
DOI: 10.1063/1.2349317
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Density control on self-assembling of Ge islands using carbon-alloyed strained SiGe layers

Abstract: The authors show that by deposition of 0.1 ML of carbon prior to the self-assembled growth of Ge quantum dots on a strained Si1−xGex buffer layer a striking decrease in dot density by two orders of magnitude from about 1011to109cm−2 occurs when the Ge content of the buffer layer increases from 0% to 64%. Their results give experimental evidence for a kinetically limited growth mechanism in which Ge adatom mobility is determined by chemical interactions among C, Si, and Ge. Thus, by adjusting the Ge content of … Show more

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Cited by 19 publications
(20 citation statements)
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“…The previous experimental findings revealed that the areal density, size uniformity, and spatial distribution of the SiGe islands grown via the Stranski-Krastanov (S-K) mode play an important role in controlling the luminescence properties of lasers and the detected wavelength of infrared photodetectors [1,3,4]. Different recipes have been proposed to enhance the island density, i.e., the boron (B) or carbon (C)-induced growth [5,6] and the low-temperature growth [7], etc. These growth methods are all kinetically limited growth related to the smaller diffusion length of Ge adatoms.…”
Section: Introductionmentioning
confidence: 98%
“…The previous experimental findings revealed that the areal density, size uniformity, and spatial distribution of the SiGe islands grown via the Stranski-Krastanov (S-K) mode play an important role in controlling the luminescence properties of lasers and the detected wavelength of infrared photodetectors [1,3,4]. Different recipes have been proposed to enhance the island density, i.e., the boron (B) or carbon (C)-induced growth [5,6] and the low-temperature growth [7], etc. These growth methods are all kinetically limited growth related to the smaller diffusion length of Ge adatoms.…”
Section: Introductionmentioning
confidence: 98%
“…To circumvent this situation, one can use a seed layer of C to counteract stress memory between layers. Several authors [11][12][13] have shown that adding submonolayer amounts of C drastically affects the dot-nucleation mechanism, which can be successfully employed to grow uncorrelated nanostructures without an additional increase of the Si spacer.…”
mentioning
confidence: 99%
“…13 By shuttering half of the wafer area in each deposition, it was possible to grow two multilayer structures on each Si wafer. In the area with C only in the seed layer, there is perfect vertical dot correlation between layers, whereas in the area with C deposited in each layer the correlation is almost completely suppressed.…”
mentioning
confidence: 99%
“…The carbon-induced Ge dots under investigation are Ge rich (>90%) dome-shaped islands [10,11], whose enhanced aspect-ratio leads to an efficient relaxation of the strain originating at the island/substrate interface due to the lattice mismatch between Ge and Si (∼4%). Raman scattering spectroscopy gives information on the average Ge content and mean strain of the islands.…”
Section: Vibrational Modesmentioning
confidence: 99%