“…The previous experimental findings revealed that the areal density, size uniformity, and spatial distribution of the SiGe islands grown via the Stranski-Krastanov (S-K) mode play an important role in controlling the luminescence properties of lasers and the detected wavelength of infrared photodetectors [1,3,4]. Different recipes have been proposed to enhance the island density, i.e., the boron (B) or carbon (C)-induced growth [5,6] and the low-temperature growth [7], etc. These growth methods are all kinetically limited growth related to the smaller diffusion length of Ge adatoms.…”