Density Dependence of Electron Spin Relaxation Time in GaA

Abstract

The electron density dependence of the electron spin relaxation time in a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling was calculated using the formula for electron spin resonance derived by the projection-reduction method. The electron spin relaxation time in GaAs increased with increasing electron density, and the electron density was found to affect the electron spin relaxation differently according to temperature. The electron spin in GaAs was relaxed mainly by optical phonon scattering at high electron densities and piezoelectric phonon scattering at relatively low electron densities.

Nonequilibrium electron spin relaxation in n-type doped GaAs sample

“…In the present work, by means of a semiclassical multiparticle MC approach we estimate spin lifetimes and spin depolarization lengths of an ensemble of initially spin polarized electrons drifting in n-doped GaAs bulks under non-degenerate regime. The electron-electron interactions are very relevant to properly account for the spin decoherence in semiconductor bulk structures [24,30,61,62]. Nevertheless, to the best of our knowledge, the unique theoretical investigation of the spin depolarization in semiconductor bulk crystals in the presence of external electric fields, taking into account the electron-electron scattering, has been reported in [61,63,64] by using the kinetic spin Bloch equations (KSBE).…”