In Bernal stacked bilayer graphene interlayer coupling significantly affects the electronic bandstructure compared to monolayer graphene. Here we present magnetotransport experiments on high-quality n-doped bilayer MoS2. By measuring the evolution of the Landau levels as a function of electron density and applied magnetic field we are able to investigate the occupation of conduction band states, the interlayer coupling in pristine bilayer MoS2, and how these effects are governed by electron-electron interactions. We find that the two layers of the bilayer MoS2 behave as two independent electronic systems where a two-fold Landau level's degeneracy is observed for each MoS2 layer. At the onset of the population of the bottom MoS2 layer we observe a large negative compressibility caused by the exchange interaction. These observations, enabled by the high electronic quality of our samples, demonstrate weak interlayer tunnel coupling but strong interlayer electrostatic coupling in pristine bilayer MoS2. The conclusions from the experiments may be relevant also to other transition metal dichalcogenide materials.Of the multitude of two-dimensional (2D) host materials, transition metal dichalcogenides (TMDs) are promising candidates for exploring quantum correlated electronic phases and electron-electron interaction effects due to their intrinsic 2D nature, large spin-orbit interaction and large effective mass carriers. Molybdenum disulfide (MoS 2